Related papers: Single-charge occupation in ambipolar quantum dots
We use charge sensing to detect entropy changes in a double quantum dot defined by electrostatic gating of a GaAs/AlGaAs heterostructure. This system can be tuned to be two separate systems, like two independent, artificial atoms, or a…
We demonstrate high speed manipulation of a few-electron double quantum dot. In the one-electron regime, the double dot forms a charge qubit. Microwaves are used drive transitions between the (1,0) and (0,1) charge states of the double dot.…
We have developed an etching process to fabricate a quantum dot and a nearby single electron transistor as a charge detector in a single layer graphene. The high charge sensitivity of the detector is used to probe Coulomb diamonds as well…
We investigate nonequilibrium transport in a triple-quantum-dot (TQD) system, where the central dot acts as a discrete tunnel barrier, subject to continuous monitoring by a quantum point contact (QPC) that is capacitively coupled to all…
We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device is largely symmetric under the gate…
We investigate coherent control of a single electron trapped in a semiconductor quantum dot. Control is enabled with a strong laser field detuned with respect to the electron light-hole optical transitions. For a realistic experimental…
Owing to a few unique advantages, double-dot single electron transistor has been proposed as an alternative detector for charge states. In this work, we present a further study for its signal-to-noise property, based on a full analysis of…
We study optically single self-assembled quantum dots embedded within the wide quantum well of a mixed type quantum structure. We compare the steady state and pulsed photoluminescence spectra of these dots to those of previously studied…
We measure the non-dissipative supercurrent in a single InAs self-assembled quantum dot (QD) coupled to superconducting leads. The QD occupation is both tuned by a back-gate electrode and lateral side-gate. The geometry of the side-gate…
Coupled electron spins in semiconductor double quantum dots hold promise as the basis for solid-state qubits. To date, most experiments have used III-V materials, in which coherence is limited by hyperfine interactions. Ge/Si…
We report an algorithm designed to perform computer-automated tuning of a single quantum dot with a charge sensor. The algorithm performs an adaptive measurement sequence of sub-sized stability diagrams until the single-electron regime is…
Quasi-static transport measurements are employed on a laterally defined tunnel-coupled double quantum dot. A nearby quantum point contact allows us to track the charge as added to the device. If charged with only up to one electron, the…
Time-resolved electron dynamics in coupled quantum dots is directly observed by a pulsed-gate technique. While individual gate voltages are modulated with periodic pulse trains, average charge occupations are measured with a nearby quantum…
We present transport measurements of the Kondo effect in a double quantum dot charged with only one or two electrons, respectively. For the one electron case we observe a surprising quasi-periodic oscillation of the Kondo conductance as a…
We report fast, simultaneous charge sensing and transport measurements of gate-defined carbon nanotube quantum dots. Aluminum radio frequency single electron transistors (rf-SETs) capacitively coupled to the nanotube dot provide…
We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and…
We probe local charge fluctuations in a semiconductor via laser spectroscopy on a nearby self-assembled quantum dot. We demonstrate that the quantum dot is sensitive to changes in the local environment at the single charge level. By…
Quantum dots (QD) with electric-field-controlled charge state are promising for electronics applications, e.g., digital information storage, single-electron transistors and quantum computing. Inorganic QDs consisting of semiconductor…
We demonstrate a 12 quantum dot device fabricated on an undoped Si/SiGe heterostructure as a proof-of-concept for a scalable, linear gate architecture for semiconductor quantum dots. The device consists of 9 quantum dots in a linear array…
Single electron charging effects in a surface-gated InSb/AlInSb QW structure are reported. This material, due to its large g-factor and light effective mass, offers considerable advantages over more commonly used materials, such as GaAs,…