Related papers: Hole spin in tunable Ge hut wire double quantum do…
In the worldwide endeavor for disruptive quantum technologies, germanium is emerging as a versatile material to realize devices capable of encoding, processing, or transmitting quantum information. These devices leverage special properties…
We have measured the carrier spin dynamics in p-doped InAs/GaAs quantum dots by pump-probe photo-induced circular dichroism and time-resolved photoluminescence experiments. We show that the hole spin dephasing is controlled by the hyperfine…
Superconductors and semiconductors are crucial platforms in the field of quantum computing. They can be combined to hybrids, bringing together physical properties that enable the discovery of new emergent phenomena and provide novel…
Semiconductor hole-spin qubits offer a promising route to quantum computation due to their weak hyperfine interaction, and strong intrinsic spin-orbit coupling enabling electric control of qubits. Scalable architectures, however, require…
We measure transport at finite bias through a double quantum dot formed by top-gates in an InAs nanowire. Pauli spin-bockade is confirmed with several electrons in the dot. This is expected due to the small exchange interactions in InAs and…
We have realized a two-dimensional hole system (2DHS), in which the 2DHS is induced at an atomically flat hydrogen-terminated Si(111) surface by a negative gate voltage applied across a vacuum cavity. Hole densities up to $7.5\times10^{11}$…
The development of energy-efficient spin-based hybrid devices that can perform functions such as logic, communication, and storage requires the ability to control and transport highly polarized spin currents over long distances in…
In the envelope-function approximation, interband transitions produced by electric fields are neglected. However, electric fields may lead to a spatially local ($k$-independent) coupling of band (internal, pseudospin) degrees of freedom.…
We study spin polarization in a split-gate quantum wire focussing on the effect of a realistic smooth potential due to remote donors. Electron interaction and spin effects are included within the density functional theory in the local spin…
We predict wide-band suppression of tunneling of spin-orbit-coupled atoms (or noninteracting Bose-Einstein condensate) in a double-well potential with periodically varying depths of the potential wells. The suppression of tunneling is…
We demonstrate dynamical spin injection into p-type germanium (Ge) at room temperature (RT) using spin pumping. The generated pure spin current is converted to a charge current by the inverse spin-Hall effect (ISHE) arising in the p-type Ge…
Buried-channel semiconductor heterostructures are an archetype material platform to fabricate gated semiconductor quantum devices. Sharp confinement potential is obtained by positioning the channel near the surface, however nearby surface…
Quantum transport measurements are performed in gate-defined, high-quality, two-dimensional hole and electron systems in an undoped InSb quantum well. For both polarities, the carrier systems show tunable spin-orbit interaction as extracted…
The tunability of the Rashba spin-orbit coupling allows to build semiconductor heterostructures with space modulated coupling intensities. We show that a wire-shaped spin-orbit modulation in a quantum well can support propagating electronic…
We have investigated spin and carrier dynamics of resident holes in high-mobility two-dimensional hole systems in GaAs/Al$_{0.3}$Ga$_{0.7}$As single quantum wells at temperatures down to 400 mK. Time-resolved Faraday and Kerr rotation, as…
We proposed and demonstrated that the nuclear spins of the host lattice in GaAs double quantum dots can be strongly polarized in either of two opposite directions, parallel or antiparallel to an external magnetic field. The direction is…
We report on transport experiments through high-mobility gate-tunable undoped InSb QWs. Due to the elimination of any Si modulation doping, the gate-defined two-dimensional electron gases in the quantum wells display a significantly…
In self assembled III-V semiconductor quantum dots, valence holes have longer spin coherence times than the conduction electrons, due to their weaker coupling to nuclear spin bath fluctuations. Prolonging hole spin stability relies on a…
We propose an implementation of a singlet-only spin qubit in a GaAs-based triple quantum dot with a (1,4,1) charge occupation. In the central multi-electron dot, the interplay between Coulomb interaction and an out-of-plane magnetic field…
We have investigated hole transport in one-dimensional quantum wires in strained germanium two-dimensional layers. The ballistic conductance characteristics show the regular quantised plateaux in units of n2e2/h, where n is an integer.…