Related papers: Chargeable photoconductivity in Van der Waals hete…
Two-dimensional Janus van der Waals (vdW) heterojunctions, referring to the junction containing at least one Janus material, are found to exhibit tuneable electronic structures, wide light adsorption spectra, controllable contact…
Van der Waals (vdW) heterostructures consisting of two dimensional materials offer a platform to obtain material by design and are very attractive owing to novel electronic states. Research on 2D van der Waals heterostructures (vdWH) has so…
The demand for high-efficiency photovoltaic systems necessitates innovations that transcend the efficiency limitations of single-junction solar cells. This study investigates a tandem photovoltaic architecture comprising a top-cell with a…
The optoelectronic properties of atomically thin transition-metal dichalcogenides are strongly correlated with the presence of defects in the materials, which are not necessarily detrimental for certain applications. For instance, defects…
We investigated the electronic and optoelectronic properties of vertical van der Waals heterostructure photodetectors using layered p type GaSe and n type InSe, with graphene as the transparent electrodes. Not only the photocurrent peaks…
Uni-traveling-carrier photodiodes (UTC-PDs), which utilize only electrons as the active carriers, have become indispensable in high-speed optoelectronics due to their unique capabilities, such as high saturation power and broad bandwidth.…
For the development of nanoscale electronics and photonics using atomically thin two-dimensional (2D) materials, it is important to realize van der Waals (vdW) interfaces with low thermal resistance, to minimize performance reduction caused…
Emerging two-dimensional transition metal dichalcogenides (TMDCs) offer a promising platform for on-chip integrated photonics because of their unique optical and electronic properties. Their naturally passivated surfaces make them highly…
Conventional photocurrents at a p-n junction depend on macroscopic built-in fields and are typically insensitive to the microscopic details of a crystal's atomic configuration. Here we demonstrate how atomic configuration can control…
That one can stack van der Waals materials with atomically sharp interfaces has provided a new material platform of constructing heterostructures. The technical challenge of mechanical stacking is picking up the exfoliated atomically thin…
Excitons in monolayer transition metal dichalcogenides (TMDCs) offer intriguing new possibilities for optoelectronics with no analogues in bulk semiconductors. Yet, intrinsic defects in TMDCs limit the radiative exciton recombination…
Efficient and scalable photocatalysts for solar water splitting remain a critical challenge in renewable energy research. The work presents a high-throughput first-principles discovery of two-dimensional (2D) type-II van der Waals…
Charge density waves (CDWs) with superconductivity, competing Fermi surface instabilities and collective orders, have captured much interest in two-dimensional van der Waals (vdW) materials. Understanding of CDW suppression mechanism, its…
The phenomenon of electron tunneling has long been central to quantum transport and continues to provide a powerful framework for understanding and controlling electronic processes in solids. When combined with optical excitation, tunneling…
Two-dimensional (2D) crystals, such as graphene and transition metal dichalcogenides (TMDs), present a collection of unique and complementary optoelectronic properties. Assembling different 2D materials in vertical heterostructures enables…
Although van der Waals layered transition metal dichalcogenides from transient absorption spectroscopy have successfully demonstrated an ideal carrier multiplication (CM) performance with an onset of nearly 2Eg,interpretation of the CM…
Transition metal dichalcogenides (TMDs) and other van der Waals (vdW) semiconductors enable transfer-printed, lattice-mismatch-free stacking of many photovoltaic junctions, motivating a re-examination of multijunction detailed-balance…
Defects are detrimental for optoelectronics devices, such as stacking faults can form carrier-transportation barriers, and foreign impurities (Au) with deep-energy levels can form carrier traps and non-radiative recombination centers. Here,…
Utilizing spin or valley degree of freedom is one of the promising approaches to realize more energy-efficient information processing. In the 2D transition metal dichalcogenide, the spin/valley current can be generated by utilizing the…
The AlGaN/GaN quantum-well heterostructures typically exhibit a positive photoconductivity (PPC) during the light illumination. Surprisingly, we found that introducing the GaN/AlN superlattice (SL) back barrier into N-polar AlGaN/GaN…