Related papers: Threshold Voltage Jitter due to Random Telegraph N…
Resistive memories (RRAM) are promising candidates for replacing present nonvolatile memories and realizing storage class memories; hence resistance switching devices are of particular interest. These devices are typically memristive, with…
The Random Resistor cum Tunneling Network (RRTN) model was proposed from our group by considering an extra phenomenological (semi-classical) tunneling process into a classical RRN bond percolation model. We earlier reported about…
In modern transistor based logic gates, the impact of noise on computation has become increasingly relevant since the voltage scaling strategy, aimed at decreasing the dissipated power, has increased the probability of error due to the…
Numerically we study the bulk current relaxation in percolative Random Resistor cum Tunneling Network (RRTN) model through a first-passage route. The RRTN considers an extra semi-classical barrier-crossing process over a voltage threshold…
We demonstrate experimentally the possibility of revealing fluctuations in the eigenfrequency of a resonator when the frequency noise is of the telegraph type. Using a resonantly driven micromechanical resonator, we show that the…
We study the resistivity scaling in nanometer-sized metallic wires due to surface roughness and grain-boundaries, currently the main cause of electron scattering in nanoscaled interconnects. The resistivity has been obtained with the…
Scientific CMOS (sCMOS) image sensors are a modern alternative to typical CCD detectors and are rapidly gaining popularity in observational astronomy due to their large sizes, low read-out noise, high frame rates, and cheap manufacturing.…
In the present paper we investigate the impact of the external noise and detection threshold level on the simulation data for the systems that evolve through metastable states. As a representative model of such systems we chose the…
Noise-induced switching between coexisting metastable states occurs in a wide range of far-from-equilibrium systems including micro-mechanical oscillators, epidemiological and climate change models, and nonlinear electronic transport in…
The threshold voltage for action potential generation is a key regulator of neuronal signal transduction, yet the mechanism of its dynamic variation is still not well described. In this paper, we propose that threshold phenomena can be…
Nanomechanical resonators promise diverse applications ranging from mass spectrometry to quantum information processing, requiring long phonon lifetimes and frequency stability. Although two-level system (TLS) defects govern dissipation at…
An experimental arrangement and a set of experiments are developed to generate empirical evidence of the effect of noise on a rotating, macro-scale cantilever structure. The experiment is a controlled representation of a rotating machinery…
Matter-wave interferometry is susceptible to non-inertial noise sources, which can induce dephasing and a resulting loss of interferometric visibility. Here, we focus on inertial torsion noise (ITN), which arises from the rotational motion…
A short review is presented of a recently developed computational approach which allows the study of the resistance noise over the full range of bias values, from the linear regime up to electrical breakdown. Resistance noise is described…
We investigate the modification of the intrinsic carrier noise spectral density induced in low-doped semiconductor materials by an external correlated noise source added to the driving high-frequency periodic electric field. A Monte Carlo…
We report measurements of voltage noise due to vortex motion in Niobium, a conventional low-Tc superconductor. A coherent oscillation leading to narrow band noise (NBN) is evidenced. Its characteristic frequency is a linear function of the…
Current noise in nanoscale systems provides additional information beyond the electronic conductance. We report measurements at room temperature of the nonequilibrium "excess" noise in ensembles of atomic-scale gold junctions repeatedly…
The scattering picture of electron transport in mesoscopic conductors shows that fluctuations of the current reveal additional information on the scattering mechanism not available through the conductance alone. The electronic fluctuations…
This paper presents an extensive characterization of the low-frequency noise (LFN) at room temperature (RT) and cryogenic temperature (4.2 K) of 40-nm bulk-CMOS transistors. The noise is measured over a wide range of bias conditions and…
As CMOS technology scales down, thermal fluctuations increasingly impact circuit behavior, posing challenges to conventional circuit design. However, the inherent stochasticity introduced by thermal noise is now being explored as a…