Related papers: Threshold Voltage Jitter due to Random Telegraph N…
Nowadays, random telegraph signals play an important role in integrated circuit performance variability, leading for instance to failures in memory circuits. This problem is related to the successive captures and emissions of electrons at…
Time-fluctuating signals are ubiquitous and diverse in many physical, chemical, and biological systems, among which random telegraph signals (RTSs) refer to a series of instantaneous switching events between two discrete levels from…
We observe rich phenomena of two-level random telegraph noise (RTN) from a commercial bulk 28-nm p-MOSFET (PMOS) near threshold at 14 K, where a Coulomb blockade (CB) hump arises from a quantum dot (QD) formed in the channel. Minimum RTN is…
In this work, the threshold voltage instability of normally-off p-GaN high electron mobility transistors (HEMTs) has been investigated by monitoring the gate current density during device on-state. The origin of the gate current variations…
We consider a two-dimensional random resistor network (RRN) in the presence of two competing biased percolations consisting of the breaking and recovering of elementary resistors. These two processes are driven by the joint effects of an…
We obtained a semi-analytical treatment obtaining estimators for the sample variance and variance of sample variance for the RTS noise. Our method suggests a way to experimentally determine the constants of capture and emission in the case…
It is usually assumed that tunneling current is fairly independent of temperature. By performing an atomistic transport simulation, we show, to the contrary, that the subthreshold tunneling current in a graphene nanoribbon (GNR)…
Process-related and stress-induced changes in threshold voltage are major variability concerns in ultra-scaled CMOS transistors. The device designers consider this variability as an irreducible part of the design problem and use different…
The tremendous progress in Metal Oxide Semiconductor (MOS) technology has been a direct consequence of device scaling for past several decades. But as we have entered the nanometer era many problems related to leakage currents and other…
Microwave irradiation causes voltage fluctuations in solid state nanodevices. Such an effect is relevant in atomic electronics and nanostructures for quantum information processing, where charge or spin states are controlled by microwave…
We study a shot noise of a wide channel gated high-frequency transistor at temperature of 4.2K near pinch-off. In this regime, a transition from the metallic to the insulating state is expected to occur, accompanied by the increase of the…
In this paper it is demonstrated that 1/f power spectrum appears in the process originated by the superposition of many single-sided random telegraph signals (RTS or RTN) with the same amplitude, probability and relaxation time. Indeed, the…
The latest generation of transistors are nanoscale devices whose performance and reliability are limited by thermal noise in low-power applications. Therefore developing efficient methods to compute the voltage and current fluctuations in…
The current noise density S of a conductor in equilibrium, the Johnson noise, is determined by its temperature T: S=4kTG with G the conductance. The sample's noise temperature Tn=S/(4kG) generalizes T for a system out of equilibrium. We…
Johnson noise is a small random voltage that appears between terminals of any resistor interacting with its thermal bath at temperature T. It looks like continuous, but the discreteness of the electrical charge suggests its discrete origin…
We study the dynamics of Random Threshold Network (RTN) on scale free networks, with asymmetric links, some interaction rules where propagation of local perturbations depends on in-degree $k$ of the nodes. We find that there is no phase…
We discuss the influence of random- and periodic impulse noise on narrowband (< 500 kHz frequency band) Power Line Communications. We start with random impulse noise and compare the properties of the measured impulse noise with the common…
Neutron noise in nuclear power reactors refers to the small fluctuations around the average neutron flux at steady state resulting from time-dependent perturbations inside the core. The neutron noise equations in the frequency domain can be…
We propose a two-terminal method to measure shot noise in mesoscopic systems based on an instability in the current-voltage characteristic of an on-chip detector. The microscopic noise drives the instability, which leads to random switching…
A single electron transistor based on Al-AlO_x-Nb tunnel junctions was fabricated by shadow evaporation and in situ barrier formation. Its output current noise was measured, using a transimpedance amplifier setup, as a function of bias…