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Perpendicular shape anisotropy (PSA) and double magnetic tunnel junctions (DMTJ) offer practical solutions to downscale spin-transfer-torque Magnetic Random-Access Memory (STT-MRAM) beyond 20 nm technology nodes, whilst retaining their…

Perpendicular magnetic anisotropy (PMA) is a key property of magnetoresistive random access memory (MRAM). To increase areal density of MRAM it is important to find a way to enhance the PMA. Recently a strong enhancement of the PMA by…

All-optical spin reversal presents a new opportunity for spin manipulations, free of a magnetic field. Most of all-optical-spin-reversal ferromagnets are found to have a perpendicular magnetic anisotropy (PMA), but it has been unknown…

Recent research on CoPd alloys with perpendicular magnetic anisotropy (PMA) has suggested that they might be useful as the pinning layer in CoFeB/MgO-based perpendicular magnetic tunnel junctions (pMTJ's) for various spintronic applications…

A permanent magnet array (PMA) is a preferred source of magnetic field for body-part-dedicated low-field (<0.5 T) portable magnetic resonance imaging (MRI) because it has a small footprint, no power consumption, and no need for a cooling…

Transition metal ferromagnetic films with perpendicular magnetic anisotropy (PMA) have ferromagnetic resonance (FMR) linewidths that are one order of magnitude larger than soft magnetic materials, such as pure iron (Fe) and permalloy (NiFe)…

The electric field effect on magnetic anisotropy was studied in an ultrathin Fe(001) monocrystalline layer sandwiched between Cr buffer and MgO tunnel barrier layers, mainly through post-annealing temperature and measurement temperature…

Understanding the magnetization dynamics induced by spin transfer torques in perpendicularly magnetized magnetic tunnel junction nanopillars and its dependence on material parameters is critical to optimizing device performance. Here we…

We introduce a minimal interface-scattering mechanism that produces a sizable anisotropic magnetoresistance (AMR) in metal/ferromagnet bilayers (e.g., Pt/YIG) without invoking bulk spin or orbital Hall currents. In a $\delta$-layer model…

We have investigated the magnetic properties of a piezoelectric actuator/ferromagnetic semiconductor hybrid structure. Using a GaMnAs epilayer as the ferromagnetic semiconductor and applying the piezo-stress along its [110] direction, we…

The perpendicular magnetic anisotropy (PMA) arising at the interface between ferromagnetic transition metals and metallic oxides are investigated via first-principles calculations. In this work very large values of PMA up to 3 erg/cm$^2$ at…

Using the spin-spiral formulation of the tight-binding linear muffin-tin orbital method, the principal components of the exchange stiffness tensor are calculated for typical hard magnets including tetragonal CoPt-type and hexagonal YCo5…

We demonstrate spin-orbit torque (SOT) switching of amorphous CoTb single layer films with perpendicular magnetic anisotropy (PMA). The switching sustains even the film thickness is above 10 nm, where the critical switching current density…

We theoretically study the effect of a material defect (material void) on switching errors associated with magneto-elastic switching of magnetization in elliptical magnetostrictive nanomagnets having in-plane magnetic anisotropy. We find…

Light-matter interaction at the nanoscale in magnetic materials is a topic of intense research in view of potential applications in next-generation high-density magnetic recording. Laser-assisted switching provides a pathway for overcoming…

In this study, we achieved the improvement of uniaxial perpendicular magnetic anisotropy (PMA) in the W/MgAl2O4/CoFeMnSi/W/CoFeMnSi/MgAl2O4/W heterostructure by manipulating the annealing temperature (TA) [350 C, 450 C, and 550 C]. We…

Perpendicular exchange bias (EB), which combines the perpendicular magnetic anisotropy and the ferromagnetic (FM) - antiferromagnetic (AFM) exchange coupling, is extremely important in the high-density AFM spintronics. However, the…

Exploring novel systems with perpendicular magnetic anisotropy (PMA) is vital for advancing memory devices. In this study, we report an intriguing PMA system involving an ultrathin Fe layer on an antiferromagnetic (AFM) CoO(001) surface.…

Magnetization reversal in magnetic particles is one of the fundamental issues in magnetic data storage. Technological improvements require the understanding of dynamical magnetization reversal processes at nanosecond time scales. New…

As a prototypical half-metallic ferromagnet, La0.67Sr0.33MnO3 (LSMO) has been extensively studied due to its versatile physical properties and great potential in spintronic applications. However, the weak perpendicular magnetic anisotropy…