Related papers: Strain-mediated Symmetry Breaking Switch with Perp…
We report the fabrication of perpendicular ferromagnetic electrodes for tunneling devices consist of van der Waals heterostructure. We found MgO/Co/Pt films on Hexagonal BN shows perpendicular magnetic anisotropy (PMA) with the easy axis…
The primary requirement for achieving spin-selective electron transfer in a nanojunction possessing a magnetic system with zero net magnetization is to break the symmetry between the up and down spin sub-Hamiltonians. Circumventing the…
The Perpendicular Shape Anisotropy Spin Transfer Torque Magnetic Random Access Memory (PSA-STT-MRAM) is a recent concept proposed to maintain the thermal stability of standard MRAM at small diameters, considering thick vertical pillars as…
Amorphous TbFeCo thin films sputter deposited at room temperature on thermally oxidized Si substrate are found to exhibit strong perpendicular magnetic anisotropy (PMA). Atom probe tomography (APT), scanning transmission electron microscopy…
The competition between shape and perpendicular magnetic anisotropies (PMA) in magnetic thin films gives rise to unusual magnetic behaviors. In ferromagnetic films with moderate PMA the magnetic domain configuration transitions from planar…
Magnetic materials with strong perpendicular magnetic anisotropy are of great interest for the development of nonvolatile magnetic memory and computing technologies due to their high stabilities at the nanoscale. However, electrical…
Thermally-assisted ultra-fast magnetization reversal in a DC magnetic field for magnetic multilayer thin films with perpendicular anisotropy has been investigated in the time domain using femtosecond laser heating. The experiment is set-up…
Spintronics-based nonvolatile components in neuromorphic circuits offer the possibility of realizing novel functionalities at low power. Current-controlled electrical switching of magnetization is actively researched in this context.…
Nanoscale magnetic tunnel junction plays a pivotal role in magnetoresistive random access memories. Successful implementation depends on a simultaneous achievement of low switching current for the magnetization switching by spin-transfer…
CuMnAs with perpendicular magnetic anisotropy is proposed as an active material for antiferromagnetic memory. Information can be stored in the antiferromagnetic domain state, while writing and readout can rely on the existence of the…
The magnetization dynamics in nanostructures has been extensively studied in the last decades, and nanomagnetism has evolved significantly over that time, discovering new effects, developing numerous applications, and identifying promising…
Magnetoelectric composites are an important class of multiferroic materials that pave the way towards a new generation of multifunctional devices directly integrable in data storage technology and spintronics. This study focuses on…
Magnetic straintronics, the strain-mediated control of magnetic anisotropy, has emerged as a key direction for next-generation energy-efficient technologies. In multiferroic heterostructures, magnetoelectric coupling is typically achieved…
We propose a two terminal nanomagnetic memory element based on magnetization reversal of a perpendicularly magnetized nanomagnet employing a unipolar voltage pulse that modifies the perpendicular anisotropy of the system. Our work…
The perpendicular magnetic anisotropy (PMA) at magnetic transition metal/oxide interfaces is a key element in building out-of-plane magnetized magnetic tunnel junctions for spin-transfer-torque magnetic random access memory (STT-MRAM). Size…
The discovery of new mechanisms of controlling magnetic properties by electric fields or currents furthers the fundamental understanding of magnetism and has important implications for practical use. Here, we present a novel approach of…
In this work we report the appearence of a large perpendicular magnetic anisotropy (PMA) in Fe$_{1-x}$Ga$_x$ thin films grown onto ZnSe/GaAs(100). This arising anisotropy is related to the tetragonal metastable phase in as-grown samples…
A nano-scale reconfigurable magnonic crystal is designed using voltage-controlled perpendicular magnetic anisotropy (PMA) in ferromagnetic-dielectric hetero-structures. A periodic array of gate metallic stripes is placed on top of a MgO/Co…
The recently discovered altermagnets (AMs), hosting momentum-dependent spin splitting and vanishing net magnetization, have attracted intensive attention for their promising application in novel spintronics. However, limited by facility and…
Perpendicular magnetic anisotropy (PMA) in ultrathin magnetic structures is a key ingredient for the development of electrically controlled spintronic devices. Due to their relatively large spin-polarization, high Curie temperature and low…