Related papers: Relaxation dynamics of spin 3/2 silicon vacancies …
Silicon vacancies in silicon carbide have been proposed as an alternative to nitrogen vacancy centers in diamonds for spintronics and quantum technologies. An important precondition for these applications is the initialization of the qubits…
Motivated by the recent acoustically driven spin resonance studies applied to silicon vacancy centers in silicon carbide, we theoretically investigate the spin--strain interaction characterized by the defect spin-$3/2$ quadrupole components…
Divacancy spins in silicon carbide implement qubits with outstanding characteristics and capabilities in an industrial semiconductor host. On the other hand, there are still numerous open questions about the physics of divacancy point…
We discuss the fine structure and spin dynamics of spin-3/2 centers associated with silicon vacancies in silicon carbide. The centers have optically addressable spin states which makes them highly promising for quantum technologies. The…
Two-level quantum systems with strong spin-orbit coupling allow for all-electrical qubit control and long-distance qubit coupling via microwave and phonon cavities, making them of particular interest for scalable quantum information…
The spin dynamics and magnetic excitations of the slightly distorted triangular s = 3/2 system alpha-CaCr2O4 are investigated by means of Raman spectroscopy and electron spin resonance (ESR) to elucidate its peculiar magnetic properties.…
Silicon carbide (SiC) hosts many interesting defects that can potentially serve as qubits for a range of advanced quantum technologies. Some of them have very interesting properties, making them potentially useful, e.g. as interfaces…
Paramagnetic defects and nuclear spins are the major sources of magnetic field-dependent spin relaxation in point defect quantum bits. The detection of related optical signals has led to the development of advanced relaxometry applications…
We investigate transition rates between different spin configurations for $S \ge 1$ spins weakly coupled to a $d$-dimensional phonon bath. This study is motivated by understanding observed magnetization relaxation as a function of…
The silicon vacancy in silicon carbide is a strong emergent candidate for applications in quantum information processing and sensing. We perform room temperature optically-detected magnetic resonance and spin echo measurements on an…
The silicon monovacancy in 4H-SiC is a promising candidate for solid-state quantum information processing. We perform high-resolution optical spectroscopy on single V2 defects at cryogenic temperatures. We find favorable low temperature…
Coupling microwave cavity modes with spin qubit transitions is crucial for enabling efficient qubit readout and control, long-distance qubit coupling, quantum memory implementation, and entanglement generation. We experimentally observe the…
We report muon spin relaxation (muSR) and magnetic susceptibility investigations of two Ti3+ chain compounds which each exhibit a spin gap at low temperature, NaTiSi2O6 and TiOCl. From these we conclude that the spin gap in NaTiSi2O6 is…
Silicon vacancy (VSi) centers in 4H silicon carbide have emerged as a highly promising platform for semiconductor-based quantum technologies, combining excellent spin and optical properties with an industrial-grade, CMOS-compatible…
Spin relaxation is investigated theoretically in two-dimensional systems. Various semiconductor structures of both n- and p-types are studied in detail. The most important spin relaxation mechanisms are considered. The spin relaxation times…
We measure the dissipation and frequency shift of a magnetically coupled cantilever in the vicinity of a silicon chip, down to $25$ mK. The dissipation and frequency shift originates from the interaction with the unpaired electrons,…
We discuss the behaviour of the Larmor frequency shift and the longitudinal relaxation rate due to non-uniform electromagnetic fields on an assembly of spin 1/2 particles, in adiabatic and nonadiabatic regimes. We also show some general…
Hidden magnetic order of Sr$_2$Ir$_{1-x}$Rh$_x$O$_4$, $x = 0.05$ and 0.1, has been studied using muon spin relaxation spectroscopy. In zero applied field and weak longitudinal fields ($\mu_0H_L \lesssim 2$~mT), muon spin relaxation data can…
Silicon vacancy centers in silicon carbide are promising candidates for storing and manipulating quantum information. Implementation of fast quantum gates is an essential requirement for quantum information processing. In a low magnetic…
The spin excitations from the nonmagnetic charge-ordered insulating state of $\alpha$-(BEDT-TTF)$_2$I$_3$ at ambient pressure have been investigated by probing the static and low-frequency dynamic spin susceptibilities via site-selective…