Related papers: A Double Quantum Dot Spin Valve
We demonstrate a 12 quantum dot device fabricated on an undoped Si/SiGe heterostructure as a proof-of-concept for a scalable, linear gate architecture for semiconductor quantum dots. The device consists of 9 quantum dots in a linear array…
Silicon spin qubits are promising candidates for realising large scale quantum processors, benefitting from a magnetically quiet host material and the prospects of leveraging the mature silicon device fabrication industry. We report the…
We discuss the possibility to generate, manipulate, and probe single spins in single-level quantum dots coupled to ferromagnetic leads. The spin-polarized currents flowing between dot and leads lead to a non-equilibrium spin accumulation,…
We prepare a gate-defined quadruple quantum dot to study the gate-tunability of single to quadruple quantum dots with finite inter-dot tunnel couplings. The measured charging energies of various double dots suggest that the dot size is…
We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots and the other is used for charge sensing. The quantum dot transport channel can…
Superconducting microwave resonator couplers will likely become an essential component in modular semiconductor quantum dot (QD) spin qubit processors, as they help alleviate cross-talk and wiring issues as the number of qubits increases.…
Spin qubits in semiconductor quantum dots represent a prominent family of solid-state qubits in the effort to build a quantum computer. They are formed when electrons or holes are confined in a static potential well in a semiconductor,…
The similarities between gated quantum dots and the transistors in modern microelectronics - in fabrication methods, physical structure, and voltage scales for manipulation - have led to great interest in the development of quantum bits…
Advances in quantum technologies are often limited by slow device characterization, complex tuning requirements, and scalability challenges. Spin qubits in electrostatically defined quantum dots provide a promising platform but are not…
We propose and investigate a spin transistor device consisting of two ferromagnetic leads connected by a two-dimensional topological insulator as the channel material. It exploits the unique features of the topological spin-helical edge…
Operating Si quantum dot (QD) arrays requires homogeneous and ultra-dense structures with aggressive gate pitch. Such a density is necessary to separately control the QDs chemical potential (i.e. charge occupation of each QD) from the…
The control of nuclear spins in quantum dots is essential to explore their many-body dynamics and exploit their prospects for quantum information processing. We present a unique combination of dynamic nuclear spin polarization and…
Capacitively coupled semiconductor spin qubits hold promise as the building blocks of a scalable quantum computing architecture with long-range coupling between distant qubits. However, the two-qubit gate fidelities achieved in experiments…
The double quantum dot device benefits from the advantages of both the spin and charge qubits, while offering ways to mitigate their drawbacks. Careful gate voltage modulation can grant greater spinlike or chargelike dynamics to the device,…
Building a practical quantum processor involves integrating millions of physical qubits along with the necessary components for individual qubit manipulation and readout. Arrays of gated silicon spins offer a promising route toward…
We present a comprehensive electrical characterization of an InAs/InP nanowire heterostructure, comprising two InP barriers forming a quantum dot (QD), two adjacent lead segments (LSs) and two metallic contacts, and demonstrate how to…
Semiconductor double quantum dot (DQD) qubits coupled via superconducting microwave resonators provide a powerful means of long-range manipulation of the qubits' spin and charge degrees of freedom. Quantum gates can be implemented by…
Recent advances in semiconductor spin qubits have achieved linear arrays exceeding ten qubits. Moving to two-dimensional (2D) qubit arrays is a critical next step to advance towards fault-tolerant implementations, but it poses substantial…
Integrating semiconducting and magnetic materials could combine transistor-like operation with nonvolatility and enable architectures such as logic-in-memory. Here, we employ correlated electrical transport and scanning nitrogen-vacancy…
Quantum-well (QW) devices have been extensively investigated in semiconductor structures. More recently, spin-polarized QWs were integrated into magnetic tunnel junctions (MTJs). In this work, we demonstrate the spin-based control of the…