Related papers: A Double Quantum Dot Spin Valve
Silicon metal-oxide-semiconductor (MOS) spin qubits have become a promising platform for quantum information processing, with recent demonstrations of high-fidelity single and two-qubit gates. To move beyond a few qubits, however, more…
Spin properties of two interacting electrons in a quantum dot (QD) embedded in a nanowire with controlled aspect ratio and longitudinal magnetic fields are investigated by using a configuration interaction (CI) method and exact…
We examine transport through a quantum dot coupled to three ferromagnetic leads in the regime of weak tunnel coupling. A finite source-drain voltage generates a nonequilibrium spin on the otherwise non-magnetic quantum dot. This spin…
Owing to the maturity of complementary metal oxide semiconductor (CMOS) microelectronics, qubits realized with spins in silicon quantum dots (QDs) are considered among the most promising technologies for building scalable quantum computers.…
We propose a novel scheme to efficiently polarize and manipulate the electron spin in a quantum dot. This scheme is based on the spin-orbit interaction and it possesses following advantages: (1) The direction and the strength of the spin…
Even as today's most prominent spin-based qubit technologies are maturing in terms of capability and sophistication, there is growing interest in exploring alternate material platforms that may provide advantages, such as enhanced qubit…
We propose a quantum interference spin-injector nanodevice consisting of a superconductor-normal metal hybrid loop connected to a superconductor-ferromagnet bilayer via a tunneling junction. We show that for certain values of the applied…
The control of orbital and spin state of single electrons is a key ingredient for quantum information processing, novel detection schemes, and, more generally, is of much relevance for spintronics. Coulomb and spin blockade (SB) in double…
By utilizing the site-dependent spin quantization axis in semiconductor quantum dot (QD) arrays, shuttling-based spin qubit gates have become an appealing approach to realize scalable quantum computing due to the circumvention of using…
Solid-state qubits integrated on semiconductor substrates currently require at least one wire from every qubit to the control electronics, leading to a so-called wiring bottleneck for scaling. Demultiplexing via on-chip circuitry offers an…
The aim of voltage control of magnetism is to reduce the power consumption of spintronic devices. For a spin valve, the magnetization directions of two ferromagnetic layers determine the giant magnetoresistance magnitude. However, achieving…
Hole spin qubits in semiconductor quantum dots (QDs) are promising candidates for quantum information processing due to their weak hyperfine coupling to nuclear spins, and to the strong spin-orbit coupling which allows for rapid operation…
In this paper, we attempt the theoretical modeling of the magnetic tunnel junctions with embedded magnetic and nonmagnetic nanoparticles (NPs). A few abnormal tunnel magnetoresistance (TMR) effects, observed in related experiments, can be…
Recent demonstrations using electron spins stored in quantum dots array as qubits are promising for developing a scalable quantum computing platform. An ongoing effort is therefore aiming at the precise control of the quantum dots…
A double quantum dot device, connected to two channels that only see each other through interdot Coulomb repulsion, is analyzed using the numerical renormalization group technique. By using a two-impurity Anderson model, and parameter…
We demonstrate efficient spin-polarized tunneling between a ferromagnetic metal and a ferromagnetic semiconductor with highly mismatched conductivities. This is indicated by a large tunneling magnetoresistance (up to 30%) at low…
The spin-polarized transport through a coherent strongly coupled double quantum dot (DQD) system is analyzed theoretically in the sequential and cotunneling regimes. Using the real-time diagrammatic technique, we analyze the current,…
Spintronics is an approach to electronics in which the spin of the electrons is exploited to control the electric resistance R of devices. One basic building block is the spin-valve, which is formed if two ferromagnetic electrodes are…
Fast spin manipulation and long spin coherence time in quantum dots are essential features for high fidelity semiconductor spin qubits. However, generally it has not been well established how to optimize these two properties simultaneously,…
We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device is largely symmetric under the gate…