Related papers: Multi-Domain Negative Capacitance Effects in Metal…
In this work, we explore the impact of spatially controlled Zr and Al heterogeneous co-doping in HfO$_2$ thin films tailored for metal-ferroelectric-insulator-semiconductor (MFIS) gate stacks of ferroelectric field effect transistors…
The magnetic proximity effect (MPE), ferromagnetic coupling at the interface of magnetically dissimilar layers, attracts much attention as a promising pathway for introducing ferromagnetism into a high-mobility non-magnetic conducting…
Ferromagnetic insulators (FM-Is) are the materials of interest for new generation quantum electronic applications. Here, we have investigated the physical observables depicting FM-I ground states in epitaxial Sm$ _{2} $NiMnO$ _{6} $ (SNMO)…
Carrier-induced ferromagnetic semiconductors (FMSs) have been intensively studied for decades as they have novel functionalities that cannot be achieved with conventional metallic materials. These include the ability to control magnetism by…
We investigate magnetic domain wall (MDW) dynamics induced by applied electric fields in ferromagnetic-ferroelectric thin-film heterostructures. In contrast to conventional driving mechanisms where MDW motion is induced directly by magnetic…
We report the results of experimental investigations of controlled domain wall (DW) pinning in a ferromagnetic nanowire (NW) by stray fields of two uniformly magnetized bistable ferromagnetic nanoparticles (NPs) placed on either side of the…
We consider a typical heterostructure domain patterned ferroelectric film/ultra thin dielectric layer/ semiconductor, where the semiconductor can be an electrolyte, paraelectric or multi layered graphene. Unexpectedly we have found that the…
We propose a framework to model ferroelectric negative capacitance: electrostatic Micro Electro Mechanical Systems (MEMS) hybrid actuators and analyze their dynamic (step input) response. Using this framework, we report the first proposal…
This thesis is a theoretical study of thermodynamic, point-defect formation and diffusion properties in Fe-Ni alloys with a focus on the magnetochemical effects. The results are derived from density functional theory (DFT) calculations and…
Conductive ferroelectric domain walls--ultra-narrow and configurable conduction paths, have been considered as essential building blocks for future programmable domain wall electronics. For applications in high density devices, it is…
Nanoscale self-localized topological spin textures, such as domain walls and skyrmions, are of interest for the fundamental physics of magnets and spintronics applications. Ferrimagnets (FiMs), in the region close to the angular momentum…
The pressing quest for overcoming Boltzmann tyranny in low-power nanoscale electronics revived the thoughts of engineers of early 1930-s on the possibility of negative circuit constants. The concept of the ferroelectric-based negative…
Current Induced Resistance Switching (CIS) was recently observed in thin tunnel junctions with ferromagnetic (FM) electrodes \emph{i.e} FM/I/FM. This effect was attributed to electromigration of metallic atoms in nanoconstrictions in the…
To realize room temperature ferromagnetic (FM) semiconductors is still a challenge in spintronics. Many antiferromagnetic (AFM) insulators and semiconductors with high Neel temperature $T_N$ are obtained in experiments, such as LaFeO$_3$,…
Atomistic density functional theory (DFT) calculations of the capacitance between a metallic cylindric gate and a carbon nanotube (CNT) are reported. Results stressing the predominant effect of quantum capacitance in limiting or even…
To extend the Moores law in the 5 nm node, a large number of two dimensional (2D) materials and devices have been thoroughly researched, among which the cold metals 2H MS2 (M = Nb, Ta) with unique band structures are expected to achieve the…
In this letter, the transient behavior of a ferroelectric (FE) metal-oxide-semiconductor (MOS) capacitor is theoretically investigated with a series resistor. It is shown that compared to a conventional high-k dielectric MOS capacitor, a…
Physical phenomena underlying operation of ferroelectric field-effect transistors (FeFETs) is treated within a unified simulation framework. The framework incorporates the Landau mean-field treatment of free energy of a ferroelectric and…
Compute-in-memory (CiM) is a promising approach to alleviating the memory wall problem for domain-specific applications. Compared to current-domain CiM solutions, charge-domain CiM shows the opportunity for higher energy efficiency and…
Domain-wall magnetoresistance and low-frequency noise have been studied in epitaxial antiferromagnetically-coupled [Fe/Cr(001)]_10 multilayers and ferromagnetic Co line structures as a function of DC current intensity. In [Fe/Cr(001)]_10…