Related papers: Multi-Domain Negative Capacitance Effects in Metal…

The primary mechanism of operation of almost all transistors today relies on electric-field effect in a semiconducting channel to tune its conductivity from the conducting 'on'-state to a non-conducting 'off'-state. As transistors continue…

Al$_{0.68}$Sc$_{0.32}$N (AlScN) has gained attention for its outstanding ferroelectric properties, including a high coercive field and high remnant polarization. Although AlScN-based ferroelectric field-effect transistors (FETs) for memory…

The effect of the domain wall (DW) on the conductance in a ballistic ferromagnetic nanowire (FMNW) is revisited by exploiting a specific perturbation theory which is effective for a thin DW; the thinness is often the case in currently…

The device concept of ferroelectric-based negative capacitance (NC) transistors offers a promising route for achieving energy-efficient logic applications that can outperform the conventional semiconductor technology, while viable operation…

Ferroelectric field-effect transistors (Fe-FETs) with ferroelectric hafnium oxide (FE HfO2) as gate insulator are being extensively explored as a promising device candidate for three-dimensional (3D) NAND memory application. FE HfO2…

While negative capacitance has been demonstrated in ferroelectric-dielectric heterostructures in the form of capacitance enhancement, all experimental evidence, to date, suggests the existence of domains therein. Here, we address the…

The effect of Fe substitution on Mn sites in the colossal magnetoresistive compounds La0.65Ca0.35Mn1-xFexO3 with 0.01<x<0.1 have been studied. A careful study in the magnetic properties has been carried out by the measurement of ac…

This study presents a theoretical investigation of the physical mechanisms governing small signal capacitance in ferroelectrics, focusing on Hafnium Zirconium Oxide. Utilizing a time-dependent Ginzburg Landau formalism-based 2D multi-grain…

HfO$_2$- and ZrO$_2$-based ferroelectric thin films have emerged as promising candidates for the gate oxides of next generation electronic devices. Recent work has experimentally demonstrated that a tetragonal/orthorhombic (t/o-) phase…

Ni-Mn-based metamagnetic shape-memory alloys exhibit a giant thermal response to magnetic fields and uniaxial stress which can be utilized in single caloric or multicaloric cooling concepts for energy-efficient and sustainable…

Ferroelectric domain walls represent multifunctional 2D-elements with great potential for novel device paradigms at the nanoscale. Improper ferroelectrics display particularly promising types of domain walls, which, due to their unique…

In this paper, an analytical predictive model of the negative capacitance (NC) effect in symmetric long channel double-gate junctionless transistor is proposed based on a charge-based model. In particular, we have investigated the effect of…

We investigate the polarization switching mechanism in ferroelectric-dielectric (FE-DE) stacks and its dependence on the dielectric thickness (TDE). We fabricate HZO-Al2O3 (FE-DE) stack and experimentally demonstrate a decrease in remnant…

We report the nanoscale electrical imaging results in hexagonal $Lu_{0.6}Sc_{0.4}FeO_3$ single crystals using conductive atomic force microscopy (C-AFM) and scanning microwave impedance microscopy (MIM). While the dc and ac response of the…

We study the effciency of the magnetoimpedance (MI) of thin-wall circumferentially ordered nanotubes in sub-GHz and GHz frequency regimes using micromagnetic simulations. We consider empty ferromagnetic tubes as well as tubes filled with…

In semiconductor spintronic devices, the semiconductor is usually lightly doped and nondegenerate, and moderate electric fields can dominate the carrier motion. We recently derived a drift-diffusion equation for spin polarization in the…

Ferroelectric nitrides have emerged as promising semiconductor materials for modern electronics. However, their domain structures and associated properties are basically unknown, despite their potential to result in optimized or new…

The field effect in metal-oxide-semiconductor (MOS) capacitors plays a key role in field-effect transistors (FETs), which are the fundamental building blocks of modern digital integrated circuits. Recent works show that the field effect can…

Boltzmann tyranny poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Negative…

Proximity effect on field-effect characteristic (FEC) in double-wall carbon nanotubes (DWCNTs) is investigated. In a semiconductor-metal (S-M) DWCNT, the penetration of electron wavefunctions in the metallic shell to the semiconducting…