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Wireless electromagnetic sensing is a passive, non-destructive technique for measuring physical and chemical changes through permittivity or conductivity changes. However, the readout is limited by the sensitivity of the materials, often…
We developed a resistance measurement using radio frequency reflection to investigate the electrical transport characteristics under destructive pulsed magnetic fields above 100 T. A homemade flexible printed circuit for a sample stage…
Two-dimensional (2D) materials are popular candidates for emerging nanoscale devices, including memristors. Resistive switching (RS) in such 2D material memristors has been attributed to the formation and dissolution of conductive filaments…
Fabricating high-performance and/or high-density flexible electronics on plastic substrates is often limited by the poor dimensional stability of polymer substrates. This can be mitigated by using glass carriers during fabrication, but…
Photoelastic modulators are optical devices with a broad range of applications. These devices typically utilize a transverse interaction mechanism between acoustic and optical waves, resulting in a fundamental trade-off between the input…
High-performance, low-power transistors are core components of advanced integrated circuits, and the ultimate limitation of Moore's law has made the search for new alternative pathways an urgent priority. Two-dimensional (2D) materials have…
A chip to wafer scale, CMOS compatible method of graphene device fabrication has been established, which can be integrated into the back end of the line (BEOL) of conventional semiconductor process flows. In this paper, we present…
For the first time, thousands of RF MOSFETs were batch-fabricated on liquid-exfoliated MoS2 below 300 {\deg}C with nearly 100% yield. The large-scale fabrication with high yield allowed the average performance instead of the best…
In this letter, we demonstrate the first BN/Graphene/BN field effect transistor for RF applications. The BN/Graphene/BN structure can preserve the high mobility of graphene, even when it is sandwiched between a substrate and a gate…
Radio Frequency Identification (RFID) and implantable biomedical devices need efficient power and data transfer with very low profile antennas. We propose a low profile electrically small antenna for near-field wireless power and data…
Intensive research is carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance transistors for integrated circuits. Fabricating transistors with ohmic contacts is challenging due to the high…
$\beta$-Ga$_{2}$O$_{3}$ nanomembranes, obtained by ion-beam-assisted exfoliation, are used in the fabrication of simple metal-semiconductor-metal (MSM) structures, that are tested as photodetectors (PD) and field-effect transistors (FET).…
Advances in power electronics have made it possible to achieve high power levels, e.g., reaching GW in grids, or alternatively high output bandwidths, e.g., beyond MHz in communication. Achieving both simultaneously, however, remains…
The presence of a direct band gap and an ultrathin form factor has caused a considerable interest in two-dimensional (2D) semiconductors from the transition metal dichalcogenides (TMD) family with molybdenum disulphide (MoS2) being the most…
The continued evolution of CMOS technology demands materials and architectures that emphasize low power consumption, particularly for computations involving large scale data processing and multivariable optimization. Ferroelectric materials…
A dual-gate graphene field-effect transistors is presented, which shows improved RF performance by reducing the access resistance using electrostatic doping. With a carrier mobility of 2700 cm2/Vs, a cutoff frequency of 50 GHz is…
This paper reports the first demonstration of a magnet-free, high performance microelectromechanical system (MEMS) based circulator. An innovative circuit based on the commutation of MEMS resonators with high quality (Q) factor using RF…
High-frequency electromagnetic fields (EMFs) are increasingly recognized either as environmental risk factors or as tools for electromagnetic attacks, which are difficult to detect in situ. Existing high-frequency EMF sensors face…
We report a new strategy for fabricating 2D/2D low-resistance ohmic contacts for a variety of transition metal dichalcogenides (TMDs) using van der Waals assembly of substitutionally doped TMDs as drain/source contacts and TMDs with no…
Oxide semiconductors have emerged as common channel materials in transistors and hold promise for next-generation electronics, yet achieving high mobility typically requires costly vacuum-based techniques. Here, ultrathin (5-nm) indium…