Related papers: Spin-orbitronics at a topological insulator-semico…
The development of spin-based applications of topological insulators requires the knowledge and understanding of spin texture configuration maps as they change via gating in the vicinity of an isolated Dirac node. An isolated…
Bias voltage dependent scattering of the topological surface state is studied by scanning tunneling microscopy/spectroscopy for a clean surface of the topological insulator Bi$_2$Te$_2$Se. A strong warping of constant energy contours in the…
Based on group theoretical arguments we derive the most general Hamiltonian for the $\text{Bi}_2\text{Se}_3$-class of materials including terms to third order in the wave vector, first order in electric and magnetic fields, first order in…
Three-dimensional topological insulators (TIs) exhibit time-reversal symmetry protected, linearly dispersing Dirac surface states. Band bending at the TI surface may also lead to coexisting trivial two-dimensional electron gas (2DEG) states…
Using spin-resolved and angle-resolved photoemission spectroscopy and first-principles calculations, we have identified bulk band inversion and spin polarized surface state evolved from a weak topological insulator (TI) phase in van der…
Topological insulators (TIs) are a class of materials characterized by an insulting bulk and high mobility topologically protected surface states, making them promising candidates for future optoelectronic and quantum devices. Although…
Terahertz spintronic devices combine ultrafast operation with low power consumption, making them strong candidates for next-generation memory technologies. In this study, we use time-domain terahertz emission spectroscopy to investigate…
We use first-principles simulations to investigate the topological properties of Bi$_2$Se$_3$ thin films deposited on amorphous SiO2, Bi$_2$Se$_3$/a-SiO$_2$, which is a promising substrate for topological insulator (TI) based device…
(Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ topological insulators (TIs) are gathering increasing attention owing to their large charge-to-spin conversion efficiency and the ensuing spin-orbit torques (SOTs) that can be used to manipulate the…
Crystals with symmetry-protected topological order, such as topological insulators, promise coherent spin and charge transport phenomena even in the presence of disorder at room temperature. Still, a major obstacle towards an application of…
In this letter, we report on successful electrical spin injection and detection in \textit{n}-type germanium-on-insulator (GOI) using a Co/Py/Al$_{2}$O$_{3}$ spin injector and 3-terminal non-local measurements. We observe an enhanced spin…
There has been considerable interest in exploiting the spin degrees of freedom of electrons for potential information storage and computing technologies. Topological insulators (TI), a class of quantum materials, have special gapless…
In the recently discovered class of materials known as topological insulators, the presence of strong spin-orbit coupling causes certain topological invariants in the bulk to differ from their values in vacuum. The sudden change of…
Since the prediction of a new topological state of matter in graphene, materials acting as topological insulators have attracted wide attention. Shortly after the theoretical proposal for a mercury telluride (HgTe)-based two-dimensional…
Prototypical three-dimensional topological insulators of the Bi$_2$Se$_3$ family provide a beautiful example of the appearance of the surface states inside the bulk band gap caused by spin-orbit coupling-induced topology. The surface states…
The search for strongly inversion asymmetric topological insulators is an active research field because these materials possess distinct properties compared with the inversion symmetric ones. In particular, it is desirable to realize a…
In an ideal bulk topological-insulator (TI) conducting surface states protected by time reversal symmetry enfold an insulating crystal. However, the archetypical TI, Bi2Se3, is actually never insulating; it is in fact a relatively good…
Spin-momentum locking in the surface mode of topological insulators (TI) leads to the surface accumulation of spin-polarized electrons caused by bias current flows through TI samples. Here, we demonstrate that scanning tunneling microscopy…
In typical topological insulator (TI) systems the TI is bordered by a non-TI insulator, and the surrounding conventional insulators, including vacuum, are not generally treated as part of the TI system. Here, we implement the first material…
The unique properties of spin-polarized surface or edge states in topological insulators (TIs) make these quantum coherent systems interesting from the point of view of both fundamental physics and their implementation in low power…