Related papers: A narrow-linewidth III-V/Si/Si3N4 laser using mult…
High-performance, high-volume-manufacturing Si3N4 photonics requires extremely low waveguide losses augmented with heterogeneously integrated lasers for applications beyond traditional markets of high-capacity interconnects.…
Silicon nitride (Si$_3$N$_4$) photonic integrated circuits (PICs) have emerged as a versatile platform for a wide range of applications, such as nonlinear optics, narrow-linewidth lasers, and quantum photonics. While thin-film Si$_3$N$_4$…
In this paper we present a novel fabrication technique for silicon nitride (Si3N4) waveguides with a thickness of up to 900 nm, which are suitable for nonlinear optical applications. The fabrication method is based on etching trenches in…
Silicon photonics is a rapidly developing technology that promises to revolutionize the way we communicate, compute, and sense the world. However, the lack of highly scalable, native CMOS-integrated light sources is one of the main factors…
Silicon carbide (SiC) is the leading wide-bandgap semiconductor material, providing mature doping and device fabrication. Additionally, SiC hosts a multitude of optically active point defects (color centers) and is relevant for many…
We investigate theoretically photonic chips with monolithically integrated blue light sources. According to our evaluations, a group-III nitride light emitting heterostructure can be efficiently combined with silicon nitride waveguiding…
Heterogeneous and monolithic integration of the versatile low loss silicon nitride platform with low temperature materials such as silicon electronics and photonics, III-V compound semiconductors, lithium niobate, organics, and glasses, has…
We show the first demonstration of a hybrid external cavity diode laser (ECDL) using aluminum nitride (AlN) as the wave-guiding material. Two devices are presented, a near-infrared (NIR) laser using a 850 nm diode and a red laser using a…
Recent advances in the processing of thin-film LNOI have enabled low-loss photonic integrated circuits, modulators with improved half-wave voltage, electro-optic frequency combs and novel on-chip electro-optic devices, with applications…
The demand for advanced photonics technology is increasing rapidly, fueled by the necessity for high-performance and cost-effective optical information processing systems extending into the quantum domain. Silicon, benefiting from its…
Silicon nitride (Si3N4) has emerged as a promising material for integrated nonlinear photonics and has been used for broadband soliton microcombs and low-pulse-energy supercontinuum generation. Therefore understanding all nonlinear optical…
Ultraviolet microdisk lasers are integrated monolithically into photonic circuits using a III-nitride on silicon platform with gallium nitride (GaN) as the main waveguiding layer. The photonic circuits consist of a microdisk and a pulley…
The main interest of group-III-nitride nanophotonic circuits is the integration of active structures and laser sources. A photonic platform of group-III-nitride microdisk lasers integrated on silicon and emitting in the blue spectral range…
We demonstrate a hybrid integrated and widely tunable diode laser with an intrinsic linewidth as narrow as 40 Hz, achieved with a single roundtrip through a low-loss feedback circuit that extends the cavity length to 0.5 meter on a chip.…
Integrated silicon nitride (Si3N4) resonators have emerged as a leading platform for nonlinear photonics, yet generating light at wavelength in the ultraviolet (UV) has remained elusive in single-resonator systems. Here we report the first…
The existing silicon-carbide-on-insulator photonic platform utilizes a thin layer of silicon dioxide under silicon carbide to provide optical confinement and mode isolation. Here, we replace the underneath silicon dioxide layer with a…
High-stress silicon nitride (Si3N4) membranes represent the state-of-the-art for cavity optomechanics, combining ultralow dissipation, optical transparency, and full compatibility with wafer-scale nanofabrication. Yet their integration into…
In the last decade, remarkable advances in integrated photonic technologies have enabled table-top experiments and instrumentation to be scaled down to compact chips with significant reduction in size, weight, power consumption, and cost.…
This paper describes a calculation of the spontaneous emission limited linewidth of a semiconductor laser consisting of hybrid or heterogeneously integrated, silicon and III-V intracavity components. Central to the approach are a)…
Hybrid silicon nanowires with an integrated light-emitting segment can significantly advance nanoelectronics and nanophotonics. They would combine transport and optical characteristics in a nanoscale device, which can operate in the…