Related papers: A narrow-linewidth III-V/Si/Si3N4 laser using mult…
We report the demonstration of continuous-wave (CW) lasing at room temperature from a III-V semiconductor nanowire integrated into a Si photonic crystal (PhC) cavity. Conventional hybrid nanowire lasers [M. Takiguchi. et.al., APL Photonics,…
The lack of high power integrated lasers have been limiting silicon photonics. Despite much progress made in chip-scale laser integration, power remains below the level required for key applications. The main inhibiting factor for high…
On-chip integration of two-dimensional (2D) materials offers great potential for the realization of novel optoelectronic devices in different photonic platforms. In particular, indium selenide (InSe) is a very promising 2D material due to…
The heterogeneous integration of silicon with III-V materials provides a way to overcome silicon's limited optical properties toward a broad range of photonic applications. Hybrid modes are a promising way to make heterogeneous Si/III-V…
Photonic integrated circuits that exploit nonlinear optics in order to generate and process signals all-optically have achieved performance far superior to that possible electronically - particularly with respect to speed. Although…
Silicon nitride photonics has enabled integration of a variety of components for applications in linear and nonlinear optics, including telecommunications, optical clocks, astrocombs, bio-sensing, and LiDAR. With the advent of inverse…
Frequency-agile lasers operating in the ultraviolet-to-blue spectral range (360-480 nm) are critical enablers for a wide range of technologies, including free-space and underwater optical communications, optical atomic clocks, and…
Monolithic integration of solid-state color centers with photonic elements of the same material is a promising approach to overcome the constraints of fabrication complexity and coupling losses in traditional hybrid integration approaches.…
We demonstrate an external cavity laser with intrinsic linewidth below 100 Hz around an operating wavelength of 852 nm, selected for its relevance to laser cooling and manipulation of cesium atoms. This system achieves a maximum CW output…
Photonic integration offers the potential to bring complex high-performance optical systems to the form factor of a compact semiconductor chip. However, the range of system functions accessible critically depends on the extent to which…
We demonstrate an integrated electro-optically tunable narrow-linewidth III-V laser with an output power of 738.8 {\mu}W and an intrinsic linewidth of 45.55 kHz at the C band. The laser cavity is constructed using a fiber Bragg grating…
Nonlinear optics in photonic integrated circuits is usually limited to utilizing the nonlinearity of a single material. In this work, we demonstrate the use of hybrid optical nonlinearities that occur in two different materials. This…
The integration of active light-emitting elements into planar photonic circuits on a silicon nitride platform remains challenging due to material incompatibilities and high-temperature processing. Proposed hybrid method embeds monodisperse…
The development of compact, energy-efficient integrated lasers operating at 1.3 um remains a critical focus in silicon photonics, essential for advancing data communications and optical interconnect technologies. This paper presents a…
Nonlinear photonic chips are capable of generating and processing signals all-optically with performance far superior to that possible electronically - particularly with respect to speed. Although silicon has been the leading platform for…
Laser-based displays are highly sought after for their superior brightness and color performance, especially in advanced applications like augmented reality (AR). However, their broader adoption has been hindered by bulky projector designs…
Due to the inherent in-direct bandgap nature of Silicon, heterogeneous integration of semiconductor lasers on Silicon on Insulator (SOI) is crucial for next-generation on-chip optical interconnects. Compact, high-efficient and high-tolerant…
Photonic integrated circuits (PICs) are a key component [1] for future telecommunication networks, where demands for greater bandwidth, network flexibility, low energy consumption and cost must all be met. The quest for all optical…
Silicon-based integrated photonics has demonstrated significant advances in miniaturization and performance, yet critical challenges remain in achieving efficient on-chip communication at high bandwidths. Plasmonic devices on silicon and…
Silicon nitride (Si$_3$N$_4$) photonic integrated circuits (PICs) have shown low linear loss, negligible nonlinear loss, and high power handling over traditional silicon photonics. To achieve high-density photonic integration and high…