Related papers: TCAD modeling for SiGe HBT THz detectors

We present technology computer-aided design (TCAD) models for AlGaAs/InGaAs and AlGaN/GaN and silicon TeraFETs, plasmonic field effect transistors (FETs), for terahertz (THz) detection validated over a wide dynamic range. The modeling…

In this paper, we will introduce a new designed direct conversion terahertz detector and we will compare its characteristics with a prefabricated design in order to obtain better performance of our new proposed design. Differences between…

We studied time resolution and response power dependence of three terahertz detectors based on significantly different types of field effect transistors. We analyzed the photoresponse of custom-made Si junctionless FETs, Si MOSFETs and…

In the past decade, detection of THz radiation by plasma-wave-assisted frequency mixing in antenna-coupled field-effect transistors (TeraFETs) -- implemented in various semiconductor material systems (Si CMOS, GaN/AlGaN, GaAs/AlGaAs,…

We report on the modeling and experimental characterization of Si CMOS detectors of terahertz radiation based on antenna-coupled field-effect transistors (TeraFETs). The detectors are manufactured using TSMC's 65-nm technology. We apply two…

Detectors of terahertz radiation based on field-effect transistors (FETs) are among most promising candidates for low-noise passive signal rectification both in imaging systems and wireless communications. However, it was not realised so…

Collective vibrations of proteins, rotations of small molecules, excitations of high-temperature superconductors, and electronic transitions in semiconductor nanostructures occur with characteristic frequencies between 1 and 10 THz.…

A whole class of two-color experiments involves intense, short Terahertz radiation pulses. A fast detector that is sensitive and able to resolve both near-infrared and Terahertz pulses at the same time is highly desirable. Here we present…

High performance Terahertz (THz) photodetector has drawn wide attention and got great improvement due to its significant application in biomedical, astrophysics, nondestructive inspection, 6th generation communication system as well as…

Detectors of high-frequency radiation based on high-electron-mobility transistors benefit from low noise, room-temperature operation, and the possibility to perform radiation spectroscopy using gate-tunable plasmon resonance. Despite…

A non-uniform capacitance profile in the channel of a THz field-effect transistor (TeraFET) could significantly improve the THz detection performance. The analytical solutions and simulations of the hydrodynamic equations for the…

The intrinsic performance of "type-II" InP/GaAsSb double heterojunction bipolar transistors (DHBTs) towards and beyond THz is predicted and analyzed based on a multi-scale technology computer aided design (TCAD) modeling platform calibrated…

Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the electron plasma in the transistor channel…

We analyze dynamic properties of vertical graphene-base hot-electron transistors (GB-HETs) and consider their operation as detectors of terahertz (THz) radiation using the developed device model. The GB-HET model accounts for the tunneling…

Silicon Carbide (SiC) has several advantageous properties compared to Silicon (Si) that make it an appealing detector material, such as a larger charge carrier saturation velocity, bandgap, and thermal conductivity. While the current…

We have developed a detector of coherent terahertz (THz) radiation that can recover the full polarisation state of a THz transient. The device is three-contact photoconductive receiver, which is capable of recording two time-varying…

The current responsivity of a semiconductor superlattice THz-photon detector is calculated using an equivalent circuit model which takes into account the finite matching efficiency between a detector antenna and the superlattice in the…

For decades, the terahertz (THz) frequency band had been primarily explored in the context of radar, imaging, and spectroscopy, where multi-gigahertz (GHz) and even THz-wide channels and the properties of terahertz photons offered…

This is a brief overview of the main physical ideas for application of field effect transistors for generation and detection of TeraHertz radiation. Resonant frequencies of the two-dimensional plasma oscillations in FETs increase with the…

Chip-based terahertz (THz) devices are emerging as versatile tools for manipulating mm-wave frequencies in the context of integrated high-speed communication technologies for potential sixth-generation (6G) wireless applications. The…