Related papers: TCAD modeling for SiGe HBT THz detectors
We report bilayer-graphene field effect transistors operating as THz broadband photodetectors based on plasma-waves excitation. By employing wide-gate geometries or buried gate configurations, we achieve a responsivity $\sim 1.2V/W (1.3…
We show that Si MOSFETs, AlGaN/GaN HEMTs, AlGaAs/InGaAs HEMTs, and p-diamond FETs with feature sizes ranging from 20 nm to 130 nm could operate at room temperature as THz spectrometers in the frequency range from 120 GHz to 9.3 THz with…
Device simulation plays a crucial role in complementing experimental device characterisation by enabling deeper understanding of internal physical processes. However, for simulations to be trusted, experimental validation is essential to…
We demonstrate that phase-difference between terahertz signals on the source and drain of a field effect transistor (a TeraFET) induces a plasmon-assisted dc current, which is dramatically enhanced in vicinity of plasmonic resonances. We…
We propose the terahertz (THz) detectors based on field-effect transistors (FETs) with the graphene channel (GC) and the black-Arsenic (b-As) black-Phosphorus (b-P), or black-Arsenic-Phosphorus (b-As$_x$P$_{1-x}$) gate barrier layer. The…
A radiation hard Si detector is used in the new CMS tracker detector at HL-LHC. It has been observed that n-MCz and n-Fz Si as a material can be used for the Si micro strip detector. The detector design for this material should be simulated…
This study investigates an experimental software defined radio (SDR) implementation on 180 GHz. Rate scarcity and frequency sparsity are discussed as hardware bottlenecks. Experimental challenges are explained along with the derived system…
Imaging applications in the terahertz (THz) frequency range are severely restricted by diffraction. Near-field scanning probe microscopy is commonly employed to enable mapping of the THz electromagnetic fields with sub-wavelength spatial…
We show that a periodic multi-grated-gate structure can be applied to THz plasmonic FETs (TeraFETs) to improve the THz detection sensitivity. The introduction of spatial non-uniformity by separated gate sections creates regions with…
Hybrid transceiver design in multiple-input multiple-output (MIMO) Tera-Hertz (THz) systems relying on sparse channel state information (CSI) estimation techniques is conceived. To begin with, a practical MIMO channel model is developed for…
A full simulation of a transition radiation detector (TRD) based on the GEANT, GARFIELD, MAGBOLTZ and HEED codes has been developed. This simulation can be used to study and develop TRD for high energy particle identification using either…
Laser-induced Terahertz (THz) Emission Spectroscopy (TES) has demonstrated its potential utility in the realm of Metal-Oxide-Semiconductor (MOS) devices as an expedient and noncontact estimation methodology. Owing to its discerning response…
I report on the experimental observation of DC instability and self-amplification through stimulated emission of 0.2 and 1.63 THz radiation using InGaAs/GaAs HEMT operating in the deep saturation regime at room temperature. I demonstrate…
Semiconductor nanowire field-effect transistors represent a promising platform for the development of room-temperature (RT) terahertz (THz) frequency light detectors due to the strong nonlinearity of their transfer characteristics and their…
We present estimates of the performance limits of terahertz detectors based on the field effect transistors (FET) in the regime of broadband detection. The maximal responsivity is predicted for short-channel FETs in the subthreshold regime.…
Terahertz (THz) wireless communication is envisioned as a promising technology, which is capable of providing ultra-high-rate transmission up to Terabit per second. However, some hardware imperfections, which are generally neglected in the…
Terahertz (THz) and sub-THz frequency emitter and detector technologies are receiving increasing attention, underpinned by emerging applications in ultra-fast THz physics, frequency-combs technology and pulsed laser development in this…
Radiation hard n-Fz Double Sided Silicon microstrip Detectors are used at the Silicon Tracker for the detection of two-dimensional position and energy measurement of the incident protons in the R3B experiment at FAIR, Darmstadt, Germany.…
Elucidating dielectric losses, structural heterogeneity, and interface imperfections is critical for improving coherence in superconducting qubits. However, most diagnostics rely on destructive electron microscopy or low-throughput…
Emerging high-frequency accelerator technology in the terahertz regime is promising for the development of compact high-brightness accelerators and high resolution-power beam diagnostics. One resounding challenge when scaling to higher…