Related papers: Threshold Voltage variation with respect to Gate g…
Understanding the interfacial electrical properties between metallic electrodes and low dimensional semiconductors is essential for both fundamental science and practical applications. Here we report the observation of thickness reduction…
Synthesized micro- and nanotubes composed of transition metal dichalcogenides (TMDCs) such as MoS$_2$ are promising for many applications in nanophotonics, because they combine the abilities to emit strong exciton luminescence and to act as…
In this letter, we report on a unique device design strategy for increasing the breakdown voltage and hence Baliga Figure of Merit (BFOM) of III-nitride HEMTs by engineering the gate edge towards the drain. The breakdown of such devices…
We report a strategy to design nanoscale cold-source field-effect transistors (CS-FETs) with bias-independent sub-60 mV/dec subthreshold swing (SS). By first-principles calculations and quantum-transport simulations, we reveal that the…
We examine the effect of an FET geometry on the charge ordering phase diagram of transition metal oxides using numerical simulations of a semiclassical model including long-range Coulomb fields, resulting in nanoscale pattern formation. We…
InGaAs gate-all-around nanowire MOSFETs with channel length down to 50nm have been experimentally demonstrated by top-down approach. The nanowire size-dependent transport properties have been systematically investigated. It is found that…
Dynamic control of conductivity and optical properties via atomic structure changes is of tremendous technological importance in information storage. Energy consumption considerations provide a driving force toward employing thin materials…
Electrical conductivity with gate-sweep in a few layer MoS$_2$-on-SiO$_2$ field-effect-transistor shows an abrupt reduction in hysteresis when cooled. The hysteresis and time dependent conductivity of the MoS$_2$ channel are modeled using…
Huge values of high field magnetoresistance have been recently reported in large arrays of CoFe nanoparticles embedded in an organic insulating lattice in the Coulomb blockade regime. An unusual exponential decrease of magnetoresistance…
We systematically investigate the interplay between materials engineering, quantum transport, and low-frequency charge noise in silicon metal--oxide--semiconductor (SiMOS) quantum devices. By combining Hall-bar transport measurements with…
We observe a complex change in the hopping exponent value from 1/2 to 1/3 as a function of disorder strength and electron density in a sodium-doped silicon MOSFET. The disorder was varied by applying a gate voltage and thermally drifting…
This paper presents a self-consistent numerical model for calculating the charge profile and gate capacitance and therefore obtaining C-V characterization for a gate-all-around graded nanowire MOSFET with a high mobility axially graded…
Properties of one-dimensional superconducting wires depend on physical processes with different characteristic lengths. To identify the process dominant in the critical regime we have studied trans- port properties of very narrow (9-20 nm)…
Organic water-gated thin-film transistors (WG-TFTs) are of great interest in developing low-cost and high-performance biosensors. The device's sensitivity to changes in measurement conditions can impair long-term operation, and care must be…
Combined diverse two-dimensional (2D) materials for semiconductor interfaces are attractive for electrically controllable carrier confinement to enable excellent electrostatic control. We investigated the transport characteristic in…
We address a recent experiment in which a strong decrease of the resistance of a superconducting film has been observed when a remote unbiased gate was placed above the film. Here we explain the experimental finding as a suppression of the…
This paper studies the impacts of stochastic load fluctuations, namely the fluctuation intensity and the changing speed of load power, on the size of the voltage stability margin. To this end, Stochastic Differential-Algebraic Equations…
Motivated by applications to quantum computer architectures we study the change in the exchange interaction between neighbouring phosphorus donor electrons in silicon due to the application of voltage biases to surface control electrodes.…
The resonant modes observed in semiconductor nanoparticles and the coherence interaction between them, producing directional light scattering, may be very interesting for CMOS integrated all-optical devices. In these systems the control…
Layered semiconductors show promise as channel materials for field-effect transistors (FETs). Usually, such devices incorporate solid back or top gate dielectrics. Here, we explore de-ionized (DI) water as a solution top gate for…