Related papers: Phase change dynamics and 2-dimensional 4-bit memo…
We propose an all-photonic, non-volatile memory and processing element based on phase-change thin-films deposited onto nanophotonic waveguides. Using photonic microring resonators partially covered with Ge2Sb2Te5 (GST) multi-level memory…
A class of chalcogenide alloy materials that shows significant changes in optical properties upon an amorphous-to-crystalline phase transition has lead to development of large data capacities in modern optical data storage. Among…
Phase-change materials (PCMs)-based integrated photonic memory offers a viable pathway for the development of neuromorphic computing chip. The sizable optical contrast in the telecom band between amorphous and crystalline phases of PCM, in…
Photonic Random-Access Memories (P-RAM) are an essential component for the on-chip non-von Neumann photonic computing by eliminating optoelectronic conversion losses in data links. Emerging Phase Change Materials (PCMs) have been showed…
Collocated data processing and storage are the norm in biological systems. Indeed, the von Neumann computing architecture, that physically and temporally separates processing and memory, was born more of pragmatism based on available…
Optical phase change materials (O-PCMs), a unique group of materials featuring drastic optical property contrast upon solid-state phase transition, have found widespread adoption in photonic switches and routers, reconfigurable meta-optics,…
We present the first demonstration of an integrated photonic phase-change memory using GeSbTe-225 on silicon-on-insulator and demonstrate reliable multilevel operation with a single programming pulse. We also compare our results on silicon…
Phase change memories (PCM) is an emerging type of non-volatile memory that has shown a strong presence in the data-storage market. This technology has recently attracted significant research interest in the development of non-Von Neumann…
Multi-component chalcogenides, such as quasi-binary GeTe-Sb$_{2}$Te$_{3}$ alloys, are widely used in optical data storage media in the form of rewritable optical discs. Ge$_{2}$Sb$_{2}$Te$_{5}$ (GST) in particular has proven to be one of…
Photonic neural networks capable of rapid programming are indispensable to realize many functionalities. Phase change technology can provide nonvolatile programmability in photonic neural networks. Integrating direct laser writing technique…
Phase-change materials based on Ge-Sb-Te alloys are widely used in industrial applications such as nonvolatile memories, but reaction pathways for crystalline-to-amorphous phase-change on picosecond timescales remain unknown. Femtosecond…
Fast and reversible phase transitions in chalcogenide phase-change materials (PCMs), in particular, Ge-Sb-Te compounds, are not only of fundamental interests, but also make PCMs based random access memory (PRAM) a leading candidate for…
Phase change materials (PCMs) have long been used as a storage medium in rewritable compact disk and later in random access memory. In recent years, the integration of PCMs with nanophotonic structures has introduced a new paradigm for…
We examine the ultrafast optical response of the crystalline and amorphous phases of the phase change material Ge$_2$Sb$_2$Te$_5$ below the phase transformation threshold. Simultaneous measurement of the transmissivity and reflectivity of…
We propose a novel topological photonic memory that encodes information through dynamically controllable Chern numbers in a two-band topological photonic system. Utilizing a honeycomb lattice photonic crystal, the memory leverages…
The advancement in capabilities enabled by handheld devices and the prospective internet of things has led to an explosion of wireless data consumption in the last decade. The ever-increasing demand for high speed data transfer has…
The von-Neumann bottleneck has constrained computing systems from efficiently operating on the increasingly large demand in data from networks and devices. Silicon (Si) photonics offers a powerful solution for this issue by providing a…
Tailoring the degree of structural disorder in Ge-Sb-Te alloys is important for the development of non-volatile phase-change memory and neuro-inspired computing. Upon crystallization from the amorphous phase, these alloys form a cubic…
We introduce phase-change material Ge2Sb2Te5 (GST) into metal-insulator-metal (MIM) waveguide systems to realize chipscale plasmonic modulators and switches in the telecommunication band. Benefitting from the high contrast of optical…
We report design of a high static performance on-off optical switch using nanoscale phase change material Ge2Sb2Te5 embedded into silicon-on-insulator waveguide. This active material can be switched between amorphous and crystalline states…