Chipscale plasmonic modulators and switches based on metal-insulator-metal waveguides with Ge2Sb2Te5
Applied Physics
2019-11-21 v1 Optics
Abstract
We introduce phase-change material Ge2Sb2Te5 (GST) into metal-insulator-metal (MIM) waveguide systems to realize chipscale plasmonic modulators and switches in the telecommunication band. Benefitting from the high contrast of optical properties between amorphous and crystalline GST, the three proposed structures can act as reconfigurable and non-volatile modulators and switches with excellent modulation depth 14 dB and fast response time in nanosecond, meanwhile possessing small footprints, simple frameworks and easy fabrication. This work provides new solutions to design active devices in MIM waveguide systems, and can find potential applications in more compact all-optical circuits for information processing and storage.
Keywords
Cite
@article{arxiv.1907.00767,
title = {Chipscale plasmonic modulators and switches based on metal-insulator-metal waveguides with Ge2Sb2Te5},
author = {Zhaojian Zhang and Junbo Yang and Wei Bai and Yunxin Han and Xin He and Jingjing Zhang and Jie Huang and Dingbo Chen and Siyu Xu and Wanlin Xie},
journal= {arXiv preprint arXiv:1907.00767},
year = {2019}
}