Related papers: Thermally activated diffusion and lattice relaxati…
We present a scheme for laser cooling and magneto-optical trapping of the Group IV (a.k.a. Group 14 or tetrel) atoms silicon (Si), germanium (Ge), tin (Sn), and lead (Pb). These elements each possess a strong Type-II transition ($J…
We studied the diffusion coefficient of hot electrons of GaN crystals in moderate electric (1...10 kV/cm) and magnetic (1...4 T) fields. Two configurations, parallel and crossed fields, are analysed. The study was carried out for…
Heat transfer is a critical aspect of modern electronics, and a deeper understanding of the underlying physics is essential for building faster, smaller, and more powerful devices with an improved performance and efficiency. In such…
Silicon (Si) is the primary donor dopant in gallium nitride (GaN), introduced through epitaxial growth or ion implantation. However, precise control over Si diffusion remains a critical challenge for high-performance device applications.…
Zinc alloys have emerged as promising candidates for biodegradable materials due to their remarkable biocompatibility and favorable mechanical characteristics. The incorporation of alloying elements plays an essential role in advancing the…
The explosion of artificial intelligence, possible end of Moore's law, dawn of quantum computing and continued exponential growth of data communications traffic have brought new urgency to the need for laser integration on the diversified…
Low-dimensional Si-based semiconductors are unique materials that can both match well with the Si-based electronics and satisfy the demand of miniaturization in modern industry. Owing to the lack of such materials, many researchers put…
The lattice dynamics of the metallic tin {\beta} and {\gamma} polymorphs has been studied by a combination of diffuse scattering, inelastic x-ray scattering and density functional perturbation theory. The non-symmorphic space group of the…
Femtosecond X-ray irradiation of solids excites energetic photoelectrons that thermalize on a timescale of a few hundred femtoseconds. The thermalized electrons exchange energy with the lattice and heat it up. Experiments with X-ray…
Germanium telluride (GeTe), a phase-change material, is known to exhibit four different structural phases: three at room temperature (one amorphous and two crystalline, $\alpha$ and $\gamma$) and one at high temperature (crystalline…
We have employed noise thermometry for investigations of thermal relaxation between the electrons and the substrate in nanowires patterned from 40-nm-thick titanium film on top of silicon wafers covered by a native oxide. By controlling the…
Hyperbolic metamaterials show exceptional optical properties, such as near-perfect broadband absorption, due to their geometrically-engineered optical anisotropy. Many of their proposed applications, such as thermophotovoltaics or radiative…
In this article, we employed nanosecond Z-scan technique to demonstrate the nonlinear optical response in Ge30Se55Bi15 thin films after thermal and photo annealing. The intensity dependent open aperture Z-scan traces reveal that for all the…
We report on the elaboration of germanium manganese nanostructured thin films and the measurement of their thermoelectric properties. We investigate the growth of Ge:Mn layers along with a thorough structural characterization of this…
Heterostructures consisting of alternating GaN/AlN epitaxial layers represent the building-blocks of state-of-the-art devices employed for active cooling and energy-saving lightning. Insights into the heat conduction of these structures are…
Thermoelectric (TE) materials research plays a vital role in heat-to-electrical energy conversion and refrigeration applications. Bismuth-antimony (Bi-Sb) alloy is a promising material for thermoelectric cooling. Herein, a high figure of…
Spin-gapless semiconductors with their unique band structures have recently attracted much attention due to their interesting transport properties that can be utilized in spintronics applications. We have successfully deposited the thin…
The dispersive behavior of materials with atomic charge numbers varing from $Z = 4$ (beryllium, Be) to $Z = 82$ (lead, Pb) was investigated experimentally and theoretically at $\gamma$-ray energies up to 2 MeV. The experiment was performed…
Phase-change materials based on Ge-Sb-Te alloys are widely used in industrial applications such as nonvolatile memories, but reaction pathways for crystalline-to-amorphous phase-change on picosecond timescales remain unknown. Femtosecond…
This work investigates the problematic diffusion of metal atoms into phase change chalcogenides, which can destroy resonances in photonic devices. Interfaces between Ge2Sb2Te5 and metal layers were studied using X-ray reflectivity (XRR) and…