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We investigate spin-dependent conductance across a magnetic tunnel junction (MTJ) including a ferromagnetic insulating barrier. The MTJ consists of two half-metallic ferromagnetic La2/3Sr1/3MnO3 (LSMO) manganites as electrodes and La2NiMnO6…

Applied Physics · Physics 2022-12-09 M. Abbasi Eskandari , S. Ghotb , P. Fournier

Two channels of the sd exchange interaction are considered in magnetic junctions. The first channel describes the interaction of transversal spins with the lattice magnetization. The second one describes the interaction of longitudinal…

Materials Science · Physics 2010-10-22 S. G. Chigarev , E. M. Epshtein , Yu. V. Gulyaev , P. E. Zilberman

This paper reports our Monte Carlo (MC) studies aiming to explain the experimentally observed paramagnetic molecule induced antiferromagnetic coupling between the ferromagnetic (FM) electrodes. Recently developed magnetic tunnel junction…

Materials Science · Physics 2020-08-10 Pawan Tyagi Collin Baker , Christopher Dangelo

Strong ferromagnetic interlayer exchange couplings $J$ in perpendicularly magnetized systems are becoming increasingly desirable for applications. We study whether ferromagnetic interlayer exchange couplings can be measured by a combination…

Materials Science · Physics 2016-04-22 Thibaut Devolder

We explore a spin Josephson effect in a system of two ferromagnets coupled by a tunnel junction formed of 2D time-reversal invariant topological insulators. In analogy with the more commonly studied instance of the Josephson effect for…

Mesoscale and Nanoscale Physics · Physics 2013-05-30 Qinglei Meng , Vasudha Shivamoggi , Taylor L. Hughes , Matthew J. Gilbert , Smitha Vishveshwara

As per de Gennes predictions, a superconducting layer placed between two ferromagnetic insulators can drive an antiferromagnetic exchange coupling between them. Using two ferromagneticinsulating GdN layers having dissimilar switching fields…

Superconductivity · Physics 2025-07-01 Sonam Bhakat , Avradeep Pal

We theoretically study the spin-dependent transport in a ferromagnet/super- conductor/ferromagnet double tunnel junction. The tunneling current in the antiferromagnetic alignment of the magnetizations gives rise to a spin imbalance in the…

Condensed Matter · Physics 2009-10-31 S. Takahashi , H. Imamura , S. Maekawa

We study a junction of a topological insulator with a thin two-dimensional (2D) non-magnetic or partially polarized ferromagnetic metallic film deposited on a 3D insulator. We show that such a junction leads to a finite spin current…

Strongly Correlated Electrons · Physics 2013-10-29 S. Modak , K. Sengupta , Diptiman Sen

Magnons, bosonic quasiparticles carrying angular momentum, can flow through insulators for information transmission with minimal power dissipation. However, it remains challenging to develop a magnon-based logic due to the lack of efficient…

We study the Josephson effect in junctions composed of two ferromagnetic insulator/diffusive superconductor bilayers separated by an insulating barrier. By computing the free energy of the system, we identify two distinct contributions: (i)…

Superconductivity · Physics 2025-10-08 A. A. Mazanik , C. -H. Huang , Miguel A. Cazalilla , F. S. Bergeret

We study spin-dependent electron transport through a ferromagnetic-antiferromagnetic-normal metal tunneling junction subject to a voltage or temperature bias, in the absence of spin-orbit coupling. We derive microscopic formulas for various…

Mesoscale and Nanoscale Physics · Physics 2018-09-11 Kei Yamamoto , Olena Gomonay , Jairo Sinova , Georg Schwiete

We propose two new approaches for regulating spin polarization and spin inversion in a conducting junction within a tight-binding framework based on wave-guide theory. The system comprises a magnetic quantum ring with finite modulation in…

Mesoscale and Nanoscale Physics · Physics 2018-09-19 Moumita Patra , Santanu K. Maiti

We summarize our recent findings on how current-driven magnetization switching and magnetoresistance in nanofabricated magnetic multilayers are affected by varying the spin-scattering properties of the non-magnetic spacers, the relative…

Materials Science · Physics 2009-11-10 S. Urazhdin , H. Kurt , M. AlHajDarwish , Norman O. Birge , W. P. Pratt , J. Bass

Although spin injection at room temperature in an IrMn metallic antiferromagnet strongly depends on the transport regime, and is more efficient in the case of magnonic transport, in this article, we present experimental data demonstrating…

Materials Science · Physics 2018-09-26 O. Gladii , L. Frangou , G. Forestier , R. L. Seeger , S. Auffret , I. Joumard , M. Rubio-Roy , S. Gambarelli , V. Baltz

Converting angular momentum between different degrees of freedom within a magnetic material results from a dynamic interplay between electrons, magnons and phonons. This interplay is pivotal to implementing spintronic device concepts that…

Electrical manipulation of spins is essential to design state-of-the-art spintronic devices and commonly relies on the spin current injected from a second heavy-metal material. The fact that chiral antiferromagnets produce spin current…

Materials Science · Physics 2022-10-26 Hang Xie , Xin Chen , Qi Zhang , Zhiqiang Mu , Xinhai Zhang , Binghai Yan , Yihong Wu

We report magnetization and magetoresistance measurements in hybrid ferromagnetic metal/semiconductor heterostructures comprised of MnAs/(Ga,Mn)As bilayers. Our measurements show that the (metallic) MnAs and (semiconducting) (Ga,Mn)As…

Materials Science · Physics 2010-07-14 M. Zhu , M. J. Wilson , B. L. Sheu , P. Mitra , P. Schiffer , N. Samarth

We study the exchange between electron and magnon spins at the interface of an antiferromagnet and a heavy metal at finite temperatures. The underlying physical mechanism is based on spin torque associated with the creation/annihilation of…

Mesoscale and Nanoscale Physics · Physics 2021-02-10 Xi-guang Wang , Yao-Zhuang Nie , L. Chotorlishvili , Qing-lin Xia , J. Berakdar , Guang-hua Guo

We propose and theoretically analyze a novel metal-oxide-semiconductor field-effect-transistor (MOSFET) type of spin transistor (hereafter referred to as a spin MOSFET) consisting of a MOS gate structure and half-metallic-ferromagnet (HMF)…

Materials Science · Physics 2009-11-10 S. Sugahara , M. Tanaka

Composite materials consisting of coupled magnetic and ferroelectric layers hold the promise for new emergent properties such as controlling magnetism with electric fields. Obviously, the interfacial coupling mechanism plays a crucial role…

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