Related papers: Resistive contribution in electrical switching exp…
Current induced spin-orbit torques driven by the conventional spin Hall effect are widely used to manipulate the magnetization. This approach, however, is nondeterministic and inefficient for the switching of magnets with perpendicular…
We revisit the theory and experiment on spin Hall magnetoresistance (SMR) in bilayers consisting of a heavy metal (H) coupled to in-plane magnetized ferromagnetic metal (F), and determine contributions to the magnetoresistance due to SMR…
We investigate magnetoresistance phenomena associated with the magnetization hard-axis collapse in polycrystalline Co thin films. Transport measurements reveal that, for specific orientations of the applied magnetic field, the system…
Spin-orbit interaction (SOI) couples charge and spin transport, enabling electrical control of magnetization. A quintessential example of SOI-induced transport is the anomalous Hall effect (AHE), first observed in 1880, in which an electric…
We investigate spin-orbit torques of metallic CuAu-I-type antiferromagnets using spin-torque ferromagnetic resonance tuned by a dc-bias current. The observed spin torques predominantly arise from diffusive transport of spin current…
We theoretically investigate the switching of a perpendicular magnetic layer by in-plane charge current due to the spin Hall effect. We find that, in the high damping regime, the threshold switching current is independent of the damping…
The resistance of a heavy metal can be modulated by an adjacent magnetic material through the combined effects of the spin Hall effect, inverse spin Hall effect, and dissipation of the spin accumulation at the interface. This phenomenon is…
Antiferromagnetic spintronics have attracted wide attention due to its great potential in constructing ultra-dense and ultra-fast antiferromagnetic memory that suits modern high-performance information technology. The electrical 180o…
We report on resistive switching of memristive electrochemical metallization devices using 3D kinetic Monte Carlo simulations describing the transport of ions through a solid state electrolyte of an Ag/TiO$_{\text{x}}$/Pt thin layer system.…
Using first-principles transport calculations, we predict that the anisotropic magnetoresistance (AMR) of single-crystal Co$_x$Fe$_{1-x}$ alloys is strongly dependent on the current orientation and alloy concentration. An intrinsic…
We theoretically investigate the effect of transverse magnetic anisotropy on spin-flip assisted tunneling through atomic spin chains. Using a phenomenological approach and first-order perturbation theory, we analytically calculate the…
We use temperature-dependent Hall measurements to identify contributions of spin Hall, magnetic proximity, and sublattice effects to the anomalous Hall signal in heavy metal/ferrimagnetic insulator heterostructures with perpendicular…
Colossal magnetoresistance (CMR) refers to a large change in electrical conductivity induced by a magnetic field in the vicinity of a metal-insulator transition and has inspired extensive studies for decades\cite{Ramirez1997, Tokura2006}.…
The spin Hall magnetoresistance (SMR) allows to investigate the magnetic textures of magnetically ordered insulators in heterostructures with normal metals by magnetotransport experiments. We here report the observation of the SMR in…
The flow of in-plane current through ultrathin magnetic heterostructures can cause magnetization switching or domain wall nucleation owing to bulk and interfacial effects. Within the magnetic layer, the current can create magnetic…
The magnetic properties of metal-organic complexes are strongly influenced by conformational changes in the ligand. The flexibility of Fe-tetra-pyridyl-porphyrin molecules leads to different adsorption configurations on a Au(111) surface.…
Single crystals of LaFeAsO were successfully grown out of KI flux. Temperature dependent electrical resistivity was measured with current flow along the basal plane, \rho_perpend(T), as well as with current flow along the crystallographic…
The out-of-plane resistivity ($\rho_c$) and magnetoresistivity (MR) are studied in antiferromangetic (AF) $Nd_{2-x}Ce_xCuO_{4}$ single crystals, which have three types of noncollinear antiferromangetic spin structures. The apparent…
Electrical manipulation of antiferromagnets with specific symmetries offers the prospect of creating novel, antiferromagnetic spintronic devices. Such devices aim to make use of the insensitivity to external magnetic fields and the…
The anomalous Hall effect is mainly used to probe the magnetization orientation in ferromagnetic materials. A less explored aspect is the torque acting back on magnetization, an effect that can be important at high currents. The spin-orbit…