Related papers: Resistive contribution in electrical switching exp…
We show that, contrary to previous belief, the transition to the antiferromagnetic state of Sr$_2$IrO$_4$ in zero magnetic field does show up in the transverse resistivity. We attribute this to a change in transverse integrals associated to…
Antiferromagnets are robust to external electric and magnetic fields, and hence are seemingly uncontrollable. Recent studies, however, realized the electrical manipulations of antiferromagnets by virtue of the antiferromagnetic Edelstein…
Electron correlation often gives birth to various orders in quantum materials. Recently, a strongly correlated kagome antiferromagnet FeGe is discovered to undergo a charge density wave transition inside the A-type antiferromagnetic state,…
Nanoscale multifunctional perpendicular organic spin valves have been fabricated. The devices based on an La$_{0.7}$Sr$_{0.3}$MnO$_3$/Alq$_3$/Co trilayer show resistive switching of up to 4-5 orders of magnitude and magnetoresistance as…
The spin Hall effect in heavy-metal thin films is routinely employed to convert charge currents into transverse spin currents and can be used to exert torque on adjacent ferromagnets. Conversely, the inverse spin Hall effect is frequently…
When electric and magnetic fields are applied together on a magnetoelectric antiferromagnet, the domain state is subject to reversal. Although the initial and final conditions are saturated single-domain states, the process of reversal may…
We establish theoretically that in nonmagnetic semiconducting bilayer or multilayer thin film systems rolled up into compact quasi-one-dimensional nanoarchitectures, the ballistic magnetoresistance is very anisotropic: conductances depend…
Altermagnets, a newly discovered class of magnets, integrate the advantages of both ferromagnets and antiferromagnets, such as enabling anomalous transport without stray fields and supporting ultrafast spin dynamics, offering exciting…
The spin Hall (SH) effect, the conversion of the electric current to the spin current along the transverse direction, relies on the relativistic spin-orbit coupling (SOC). Here, we develop a microscopic theory on the mechanisms of the SH…
In several experiments the magnitude of the contribution of magnetic impurities to the Kondo resistivity shows size dependence in mesoscopic samples. It was suggested ten years ago that magnetic surface anisotropy can be responsible for the…
An experimental protocol is presented that allows the entropy generated by spin-transfer to be measured. The effect of a strong spin-polarized current injected on a ferromagnetic nanostructure is investigated with focusing on the…
We consider a microscopic theory for the spin Hall magnetoresistance (SMR). We generally formulate a spin conductance at an interface between a normal metal and a magnetic insulator in terms of spin susceptibilities. We reveal that SMR is…
The spin flip of the conduction electrons at the interface of a ferromagnetic and a nonmagnetic part of a metallic wire, suspended between two electrodes, is shown to tort the wire when a current is driven through it. In order to enhance…
The MnBi$_2$Te$_4$ material family has emerged as a key platform for exploring magnetic topological phases, most notably exemplified by the experimental realization of the axion insulator state. While spin dynamics are known to…
Despite the potential advantages of information storage in antiferromagnetically coupled materials, it remains unclear whether one can control the magnetic moment orientation efficiently because of the cancelled magnetic moment. Here, we…
We report the observation of the three-dimensional angular dependence of the spin Hall magnetoresistance (SMR) in a bilayer of the epitaxial antiferromagnetic insulator NiO(001) and the heavy metal Pt, without any ferromagnetic element. The…
We report on the angular and field dependence of the magnetoresistance (MR) in bilayers of Pt/EuO_{1-x} thin films, measured in both in-plane and out-of-plane geometries at different temperatures (T). Presence of oxygen vacancies manifested…
SSMO5347 thin films (thicknesses ~200 nm) were deposited by on-axis dc magnetron sputtering on the single crystal LSAT (001) substrates. These films are oriented along the out of plane c-direction. The ferromagnetic and insulator-metal…
We present a novel method for measuring the modulation of magnetic anisotropy and the strength of spin-orbit interaction by an electrical current in nanomagnets. Our systematic study explores the current dependencies of these properties…
The electric current and the magnetoresistance effect are studied in a double quantum-dot system, where one of the dots QDa is coupled to two ferromagnetic electrodes (F1,F2), while the second QDb is connected to a superconductor S. For…