Related papers: Resistive contribution in electrical switching exp…
We report the observation of tunneling anisotropic magnetoresistance (TAMR) in an organic spin-valve-like structure with only one ferromagnetic electrode. The device is based on a new high mobility perylene diimide-based n-type organic…
Magnetic anisotropies have key role to taylor magnetic behavior in ferromagnetic systems. Further, they are also essential elements to manipulate the thermoelectric response in Anomalous Nernst (ANE) and Longitudinal Spin Seebeck systems…
Spin-orbit coupling in ferromagnets gives rise to the anomalous Hall effect and the anisotropic magnetoresistance, both of which can be used to create spin-transfer torques in a similar manner as the spin Hall effect. In this paper we show…
The ability to manipulate antiferromagnetic (AF) moments is a key requirement for the emerging field of antiferromagnetic spintronics. Electrical switching of bi-state AF moments has been demonstrated in metallic AFs, CuMnAs and Mn$_2$Au.…
We demonstrate stable and reversible current induced switching of large-area ($> 100\;\mu m^2$) antiferromagnetic domains in NiO/Pt by performing concurrent transport and magneto-optical imaging measurements in an adapted Kerr microscope.…
Recent thermodynamic measurements on two-dimensional (2D) electron systems have found diverging behavior in the magnetic susceptibility and appearance of ferromagnetism with decreasing electron density. The critical densities for these…
The anomalous Nernst effect in nanostructured magnetic materials is a key phenomenon to optimally control and employ the internal energy dissipated in electronic devices, being dependent on for instance the magnetic anisotropy of the active…
This study investigates the anomalous orbital effects in iron (Fe) films with strong uniaxial anisotropy, highlighting the interactions between spin and orbital currents. Using heterogeneous YIG/Fe and YIG/Pt/Fe structures, fabricated by…
A spin version of transistor, where magnetism is used to influence electrical behaviors of the semiconductor, has been a long-pursued device concept in spintronics. In this work, we experimentally study a field-effect transistor with CrSBr,…
We have performed conductivity measurements on a Si-MOSFET sample with a slot in the upper gate, allowing for different electron densities n_1 and n_2 across the slot. Dynamic longitudinal resistance was measured by a standard lock-in…
The discovery of altermagnet (AM) marks a significant advancement in magnetic materials, combining characteristics of both ferromagnetism and antiferromagnetism. In this Letter, we focus on CrSb, which has been verified to be an AM and to…
Metallic nanogranular films display a complex dynamical response to a constant bias, showing up as atypical resistive switching mechanism which could be used to create electrical components for neuromorphic applications. To model such a…
The exploration of transverse electromagnetic responses in solids with broken spatial-inversion (I) and/or time-reversal (T) symmetries has unveiled numerous captivating phenomena, including the (anomalous) Hall effect, Faraday rotations,…
In this work, we systematically investigate the effect of Anti-site Disorder (ASD) on electrical resistivity $\rho(T)$ and transverse magnetoresistance $MR_{\perp}$ in off-stoichiometric Co-Fe-Ti-Si (CFTS) thin films across the…
Spin currents can modify the magnetic state of ferromagnetic ultrathin films through spin-orbit torque. They may be generated by means of spin-orbit interaction by either bulk or interfacial phenomena. Electrical transport measurements…
Development of modern spintronic devices requires materials exhibiting specific magnetic effects. In this paper, we investigate a magnetization reversal mechanism in a [Co/Pdx]7/CoO/[Co/Pdy]7 thin-film composite where an antiferromagnet is…
In antiferromagnetic spintronics, it is essential to separate the resistance modifications of purely magnetic origin from other effects generated by current pulses intended to switch the N\'eel vector. We investigate the magnetoresistance…
The spin Hall effect in a heavy metal intercorrelates an AC electric current to the magnetization dynamics in an adjacent ferromagnet, which manifests as an electric reactance in the system's current-voltage response. We present a…
MBE-grown, 5 nm-thick annealed Ga0.95Mn0.05As films with Tc~90K demonstrate transition from metallic to insulating state below To~10K, where sheet resistances Rsh~h/e2 and both longitudinal Rxx and transverse Rxy components become…
A 75 nm-thick Fe0.5Pt0.5 film is a ferromagnetic metal showing striped magnetic domains in remanence at room temperature. The magnetoresistance is characterized by varying the external temperature and the in-plane magnetic field intensity,…