Related papers: Stable quantum dots in an InSb two-dimensional ele…
InGaAs Quantum Dots embedded in GaAs barriers, grown in inverted tetrahedral recesses of 7 {\mu}m edge, have showed interesting characteristics in terms of uniformity and spectral narrowness of the emission. In this paper we present a study…
Introduction of a Josephson field effect transistor (JoFET) concept sparked active research on proximity effects in semiconductors. Induced superconductivity and electrostatic control of critical current has been demonstrated in…
We report the fabrication and electrical characterization of a single electron transistor in a modulation doped silicon/silicon-germanium heterostructure. The quantum dot is fabricated by electron beam lithography and subsequent reactive…
We present an InAs-GaSb-based system in which the electric-field tunability of its 2D energy gap implies a transition towards a thermodynamically stable excitonic condensed phase. Detailed calculations show a 3 meV BCS-like gap appearing in…
A two-dimensional (2D) electron gas formed in a modulation-doped GaAs/AlGaAs single quantum well undergoes a first-order transition when the first excited subband is occupied with electrons, as the Fermi level is tuned into resonance with…
Transport properties of a two-dimensional electron gas (2DEG) are studied in the presence of a perpendicular magnetic field $B$, of a {\it weak} one-dimensional (1D) periodic potential modulation, and of the spin-orbit interaction (SOI)…
Here, we report an alternative route to achieve two dimensional electron gas (2DEG) in a semiconductor structure. It has been shown that charge accumulation on the side facets can lead to the formation of 2DEG in a network of c-axis…
Transport through two quantum dots laterally embedded in Aharonov-Bohm interferometry with infinite intradot and arbitrary interdot Coulomb repulsion is analyzed in the weak coupling and Coulomb blockade regime. By employing the modified…
Quantum dots realized in InAs are versatile systems to study the effect of spin-orbit interaction on the spin coherence, as well as the possibility to manipulate single spins using an electric field. We present transport measurements on…
Ground state of two-electron quantum dots in single-valley materials like GaAs is always a spin singlet regardless of what the potential and interactions are. This statement cannot be generalized to the multi-valley materials like $n$-doped…
A dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin-orbit interaction in a narrow bandgap semiconductor InSb nanosheet. We demonstrate that by…
We perform scanning gate microscopy on individual suspended carbon nanotube quantum dots. The size and position of the quantum dots can be visually identified from the concentric high conductance rings. For the ultra clean devices used in…
A three-level system with partially broken SU(3) symmetry immersed in a metal, comprised of a unique non-interacting ground state and two-fold degenerate excited states, exhibits a stable two-channel Kondo fixed point within a wide range of…
We report on low-temperature electronic transport measurements of a silicon metal-oxide-semiconductor quantum dot, with independent gate control of electron densities in the leads and the quantum dot island. This architecture allows the dot…
We report on the optical properties of single InAs/GaAs quantum dots emitting near the telecommunication O-band, probed via Coulomb blockade and non-resonant photoluminescence spectroscopy, in the presence of external electric and magnetic…
We demonstrate a 12 quantum dot device fabricated on an undoped Si/SiGe heterostructure as a proof-of-concept for a scalable, linear gate architecture for semiconductor quantum dots. The device consists of 9 quantum dots in a linear array…
We use charge sensing to detect entropy changes in a double quantum dot defined by electrostatic gating of a GaAs/AlGaAs heterostructure. This system can be tuned to be two separate systems, like two independent, artificial atoms, or a…
The discovery of two-dimensional electron gases (2DEGs) at the interface between two insulating complex oxides, such as LaAlO3 (LAO) or gamma-Al2O3 (GAO) epitaxially grown on SrTiO3 (STO) 1,2, provides an opportunity for developing…
Spin-orbit coupling in solids describes an interaction between an electron's spin, an internal quantum-mechanical degree of freedom, with its linear momentum, an external property. Spin-orbit interaction, due to its relativistic nature, is…
GaAs-based two-dimensional electron gases (2DEGs) show a wealth of remarkable electronic states, and serve as the basis for fast transistors, research on electrons in nanostructures, and prototypes of quantum-computing schemes. All these…