Related papers: Scalable Memdiodes Exhibiting Rectification and Hy…
In this paper, we report on the impact of metal/polymer interfaces on the rectifying behavior of novel multi-segmented hybrid nanowires (HNWs) made of metallic and conjugated polymer (CP) segments. Using HNWs integrated in micromachined…
The width of the electrodes is not included in the current phenomenological models of memristance, but is included in the memory-conservation (mem-con) theory of memristance. An experimental study of the effect of changing the top electrode…
Spin-torque memristors were proposed in 2009, which could provide fast, low-power and infinite memristive behavior for large-density non-volatile memory and neuromorphic computing. However, the strict requirements of combining high…
Voltage-driven memristive switching has been reported in molecular junctions, yet its microscopic origin often remains elusive. Here, we study three rigid OPE-like derivatives that lack an obvious internal switching pathway using…
Memristors have been widely studied as artificial synapses in neuromorphic circuits, due to their functional similarity with biological synapses, low operating power, and high integration density. In this work, a memristive synapse,…
Manipulating vortices in non-conventional superconductors is nowadays a challenging path toward controlling functionalities for superconducting nanodevices. Here, we directly observe and control single vortex core trajectories with…
Memory devices based on resistive switching (RS) have not been fully realised due to lack of understanding of the underlying switching mechanisms. Nature of ion transport responsible for switching and growth of conducting filament in…
The ferroelectricity emerging in non-polar graphene/hexagonal boron nitride (hBN) heterostructures has drawn considerable attention because of its fascinating properties and promising high-frequency electrical polarization switching. Yet,…
Silicon nanowires (Si NW) are ideal candidates for solution processable field effect transistors (FETs). The interface between the nanowire channel and the gate dielectric plays a crucial role in the FET performance, and it can be…
The dynamic interplay between light and electric field control of charge states lies at the heart of developing multifunctional optoelectronic devices. While persistent photoconductivity (PPC) and gate-voltage (VG)-induced electron trapping…
Cold metals, characterized by their distinctive band structures, hold promise for innovative electronic devices such as tunnel diodes with negative differential resistance (NDR) effect and field-effect transistors (FETs) with sub-60 mV/dec…
We report the bias voltage controlled inversions of tunneling magnetoresistance (TMR) in magnetic tunnel junctions composed of Fe3GaTe2 electrodes and hBN tunneling barrier, observed at room temperature. The polarity reversal of TMR occurs…
Synaptic plasticity, the dynamic tuning of signal transmission strength between neurons, serves as a fundamental basis for memory and learning in biological organisms. This adaptive nature of synapses is considered one of the key features…
Adding porosity to battery electrodes is believed to be universally useful for adding space to accommodate volumetric expansion, electrolyte access to all active materials, helping to mitigate poor C-rate performance for thicker electrodes…
Memristive devices whose resistance can be hysteretically switched by electric field or current are intensely pursued both for fundamental interest as well as potential applications in neuromorphic computing and phase-change memory. When…
We consider the Ising phase of the antiferromagnetic XXZ Heisenberg chain on a finite-size lattice with N sites.We compute the large $N$ behavior of the spin stiffness, obtaining the correlation length \xi. We use our results to discuss the…
Nanoscale resistive switching devices (memristive devices or memristors) have been studied for a number of applications ranging from non-volatile memory, logic to neuromorphic systems. However a major challenge is to address the potentially…
We investigate the effects of the competition between exchange ($J$) and dipolar ($D$) interactions on the magnetization reversal mechanisms of ferromagnetic nanotubes. Using first atomistic Monte Carlo (MC) simulations for a model with…
Spin defects in two-dimensional materials hold significant potential for quantum information technologies and sensing applications. The negatively charged boron vacancy (VB-) in hexagonal boron nitride (hBN) has attracted considerable…
We report on a healing of defects at room temperature in the organic semiconductor pentacene. This peculiar effect is a direct consequence of the weak intermolecular interaction which is characteristic of organic semiconductors. Pentacene…