Related papers: Scalable Memdiodes Exhibiting Rectification and Hy…
The areal footprint of memristors is a key consideration in material-based neuromorophic computing and large-scale architecture integration. Electronic transport in the most widely investigated memristive devices is mediated by filaments,…
Cuprate superconductors are strongly sensitive materials to disorder and oxygen stoichiometry; even minute variations of those parameters drastically change their electronic properties. Here we exploit this characteristic to engineer a…
Atomically-thin 2D semiconducting materials integrated into van der Waals heterostructures have enabled architectures that hold great promise for next generation nanoelectronics. However, challenges still remain to enable their full…
Oxide heterostructures with polar films display special electronic properties, such as the electronic reconstruction at their internal interfaces with the formation of two-dimensional metallic states. Moreover, the electrical field from the…
Advanced operando transmission electron microscopy (TEM) techniques enable the observation of nanoscale phenomena in electrical devices during operation. They can be used to study the switching mechanisms in two-dimensional (2D)…
The stability of the superconducting dissipationless and resistive states in single-crystalline NbSe2 nanobelts is characterized by transport measurements in an external magnetic field (H). Current-driven electrical measurements show…
Neuromorphic computing --- brainlike computing in hardware --- typically requires myriad CMOS spiking neurons interconnected by a dense mesh of nanoscale plastic synapses. Memristors are frequently citepd as strong synapse candidates due to…
The orientational and translational order of a thermotropic ferroelectric liquid crystal (2MBOCBC) imbibed in self-organized, parallel, cylindrical pores with radii of 10, 15, or 20 nm in anodic aluminium oxide monoliths (AAO) are explored…
Nanofluidic memristive devices work with nanoscale pores and ions dissolved in water, which harness the ionic memory effect aiming to store and process information. These devices share the same charge carriers as biological systems and…
Neuromorphic hardware facilitates rapid and energy-efficient training and operation of neural network models for artificial intelligence. However, existing analog in-memory computing devices, like memristors, continue to face significant…
We present a computationally inexpensive yet accurate phenomenological model of memristive behavior in titanium dioxide devices by fitting experimental data. By design, the model predicts most accurately I-V relation at small non-disturbing…
The crystal structure and the magnetism of BaMn$_2$O$_3$ have been studied by thermodynamic and by diffraction techniques using large single crystals and powders. BaMn$_2$O$_3$ is a realization of a $S = 5/2$ spin ladder as the magnetic…
Solid-state programmable metallization cells have attracted considerable attention as memristive elements for Redox-based Resistive Random Access Memory (ReRAM) for low-power and low-voltage applications. In principle, liquid-state…
Unimolecular current rectifiers are fundamental building blocks in organic electronics. Rectifying behavior has been identified in numerous organic systems due to electron-hole asymmetries of orbital levels interfaced by a metal electrode.…
Reproducibility, endurance, driftless data retention, and fine resolution of the programmable conductance weights are key technological requirements against memristive artificial synapses in neural network applications. However, the…
In the last decade, a 2-terminal passive circuit element called a memristor has been developed for non-volatile resistive random access memory and has more recently shown promise for neuromorphic computing. Compared to flash memory,…
Systematic spectroscopic ellipsometry investigations have been performed in order to elucidate the asymmetric insulator-to-metal transition in thin VO$_2$ films. The comprehensive analysis of the obtained macroscopic optical response yields…
We model electrical conductivity in metastable amorphous $Ge_{2}Sb_{2}Te_{5}$ using independent contributions from temperature and electric field to simulate phase change memory devices and Ovonic threshold switches. 3D, 2D-rotational, and…
Here we investigate epitaxial Hf0.5Zr0.5O2 ferroelectric thin films as potential candidates to be used as non-volatile electric-field-modulated thermal memories. The electric-field dependence of the thermal conductivity of…
We study metastability and nucleation for the Blume-Capel model: a ferromagnetic nearest neighbour two-dimensional lattice system with spin variables taking values in -1,0,+1. We consider large but finite volume, small fixed magnetic field…