Related papers: 4f Conduction in the Magnetic Semiconductor NdN
Two-dimensional (2D) multiferroic materials with controllable magnetism have promising prospects in miniaturized quantum device applications, such as high-density data storage and spintronic devices. Here, using first-principles…
We present a detailed theory of transport through line junctions formed by counterpropagating single-branch fractional-quantum-Hall edge channels having different filling factors. Intriguing transport properties are exhibited when strong…
The structure, magnetic and transport properties of thin films of the Heusler ferrimagnet Mn_{2}CoAl have been investigated for properties related to spin gapless semiconductors. Oriented films were grown by molecular beam epitaxy on GaAs…
A key issue in heavy fermion research is how subtle changes in the hybridization between the 4$f$ (5$f$) and conduction electrons can result in fundamentally different ground states. CeRhIn$_5$ stands out as a particularly notable example:…
The recent discovery of superconductivity in hole-doped NdNiO$_2$ thin films has captivated the condensed matter physics community. Such compounds with a formal Ni$^+$ valence have been theoretically proposed as possible analogues of the…
We observe large amplitude changes in the resistance of ferromagnetic (F) wires at the onset of superconductivity of adjacent superconductors (S). New sharp peaks of large amplitude are found in the magnetoresistance of the F-wires. We…
We have investigated the magnetoresistance of ferromagnet-semiconductor devices in an InAs two-dimensional electron gas system in which the magnetic field has a sinusoidal profile. The magnetoresistance of our device is large. The…
The magnetotransport behaviour inside the nematic phase of bulk FeSe reveals unusual multiband effects that cannot be reconciled with a simple two-band approximation proposed by surface-sensitive spectroscopic probes. In order to understand…
Antiferromagnets are promising candidates for next-generation spintronic devices owing to their negligible stray fields and ultrafast spin dynamics. The noncollinear antiferromagnet $\mathrm{Mn}_{3}\mathrm{Sn}$ exhibits a large anomalous…
A scaling relation of the anomalous Hall effect recently found in a ferromagnetic semiconductor (Ti,Co)O_2_ is compared with those of various ferromagnetic semiconductors and metals. Many of these compounds with relatively low conductivity…
Non-uniform magnetic structures produce emergent electromagnetic phenomena such as the topological Hall effect and the spin-motive force (SMF). The experimental reports on the SMF, however, are very few and the relationship between the SMF…
The Hall effect is investigated in detail for nonsuperconducting and superconducting FeTe thin films. The Hall coefficient commonly exhibits a sign reversal from positive in a high-temperature paramagnetic state to negative in a…
We present a systematic study of the dc-resistivity, Hall effect, and magnetoresistance in the normal state of quasi 2D heavy fermion superconductors CeMIn5 (M: Rh and Co) under pressure. Here the electronic system evolves with pressure…
GdN is a ferromagnetic semiconductor which has seen increasing interest in the preceding decades particularly in the areas of spin- and superconducting- based electronics. Here we report a detailed computational study and optical…
We report magnetoresistance measurements over an extensive temperature range (0.1 K $\leq T \leq$ 100 K) in a disordered ferromagnetic semiconductor (\gma). The study focuses on a series of metallic \gma~ epilayers that lie in the vicinity…
A key step towards dissipationless transport devices is the quantum anomalous Hall effect, which is characterized by an integer quantized Hall conductance in a ferromagnetic insulator with strong spin-orbit coupling. In this work, the…
A ferromagnetic semiconductor, rutile (Ti,Co)O2, exhibits anomalous Hall effect at room temperature. Strong dependence of the anomalous Hall effect, as well as the magneto-optic response, on the carrier concentration suggests carrier…
Integrating ferroelectricity, antiferromagnetism, and topological quantum transport within a single material is rare, but crucial for developing next-generation quantum devices. Here, we propose a multiferroic heterostructure consisting of…
Employment of the non-trivial proximity effect in Superconductor/Ferromagnet (S/F) heterostructures for creation of novel superconducting devices requires an accurate control of magnetic states in complex thin-film multilayers composing…
The anomalous transport properties of Heusler compounds become a hotspot of research in recent years due to their unique band structure and possible application in spintronics. In this paper, we report the anomalous Hall effect in…