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Related papers: 4f Conduction in the Magnetic Semiconductor NdN

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The unique connectivity of kagome lattices gives rise to topological properties, such as flat bands and Dirac cones. When combined with ferromagnetism and a chemical potential near the 2D Dirac points, this structure offers the potential to…

Complexity of quantum phases of matter is often understood by the underlying gauge structures, as was recognized by the $\mathbb{Z}_2$ and U(1) gauge theory description of spin liquid in frustrated magnets. Anomalous Hall effect of…

Uranium 5f electrons often yield heavy-fermion behavior via Kondo screening. However, the pronounced bad-metallic transport of uranium mononitride (UN) defies an incoherent Kondo explanation. Using density-functional theory combined with…

Strongly Correlated Electrons · Physics 2025-09-30 Byungkyun Kang , Roy N. Herrera-Navarro , Stephen S. Micklo , Mark R. Pederson , Eunja Kim

High-quality layers of the (Ga,Mn)(Bi,As) quaternary compound semiconductor have been grown by the low-temperature molecular-beam epitaxy technique. An effect of Bi incorporation into the (Ga,Mn)As ferromagnetic semiconductor and the…

Materials Science · Physics 2023-07-19 K. Levchenko , T. Andrearczyk , J. Z. Domagala , T. Wosinski , T. Figielski , J. Sadowski

The superconducting and magnetic properties of Nb/Pd_1-xFe_x/Nb triple layers with constant Nb layer thickness d_Nb=200 A and different interlayer thicknesses are investigated. The thickness dependence of the magnetization and of the…

Superconductivity · Physics 2016-08-31 M. Schoeck , C. Suergers , H. v. Loehneysen

We experimentally image the magnetic precession phase of patterned spin Hall multilayer samples to study the rf driving field vector using time-resolved anomalous Nernst effect (TRANE) microscopy. Our ferromagnetic resonance (FMR)…

Materials Science · Physics 2016-04-27 Feng Guo , Jason M. Bartell , Gregory D. Fuchs

We propose a spin Hall device to induce a large spin Hall effect in a superconductor/normal metal (SN) junction. The side jump and skew scattering mechanisms are both taken into account to calculate the extrinsic spin Hall conductivity in…

Superconductivity · Physics 2015-08-06 S. Hikino , S. Yunoki

We report magneto-transport measurements in wide GaAs quantum wells with tunable density to probe the stability of the fractional quantum Hall effect at filling factor $\nu = $ 5/2 in the vicinity of the crossing between Landau levels (LLs)…

Mesoscale and Nanoscale Physics · Physics 2012-03-06 Yang Liu , D. Kamburov , M. Shayegan , L. N. Pfeiffer , K. W. West , K. W. Baldwin

This work reports a study of the nonlinear Hall Effect (HE) in the semimetallic ferromagnet EuB6. A distinct switch in its Hall resistivity slope is observed in the paramagnetic phase, which occurs at a single critical magnetization over a…

Strongly Correlated Electrons · Physics 2009-09-01 Xiaohang Zhang , Liuqi Yu , Stephan von Molnar , Zachary Fisk , Peng Xiong

Half-semimetals, characterized by their spin-polarized electronic states, hold significant promise for spintronic applications but remain scarce due to stringent electronic and magnetic criteria. Through a combination of transport…

Strongly Correlated Electrons · Physics 2025-08-20 Shanshan Han , Rongsheng Li , Xingxing Jiang , Ming Lu , Shuxiang Xu , Jiang Zeng , Dong Wu , Nanlin Wang

Detecting the orientation of the N\'eel vector is a major research topic in antiferromagnetic spintronics. Here we recognize the intrinsic nonlinear Hall effect, which is independent of the relaxation time, as a prominent contribution to…

Mesoscale and Nanoscale Physics · Physics 2022-01-05 Chong Wang , Yang Gao , Di Xiao

The anomalous Hall effect (AHE) has been studied systematically in the low-conductivity ferromagnetic oxide Fe$_{3-x}$Zn$_x$O$_4$ with $x = 0$, 0.1, and 0.5. We used (001), (110), and (111) oriented epitaxial Fe$_{3-x}$Zn$_x$O$_4$ films…

Magnetic topological semimetals often exhibit unusual electronic and thermal transport due to nontrivial bulk band crossings, enabling simultaneous realization of large anomalous Hall and Nernst conductivities ($\sigma_{xy}$ and…

Nonlinear transport phenomena induced by the chiral anomaly are explored within a 4D field theory defined holographically as $U(1)_V\times U(1)_A$ Maxwell-Chern-Simons theory in Schwarzschild-$AdS_5$. First, in presence of external…

High Energy Physics - Theory · Physics 2019-03-19 Yanyan Bu , Tuna Demircik , Michael Lublinsky

This paper studies the two-channel Kondo lattice in the large-N limit at half-filling. In this model, the continuous channel-symmetry is spontaneously broken, forming a channel ferromagnet in which one conduction channel forms a Kondo…

Strongly Correlated Electrons · Physics 2020-02-26 Ari Wugalter , Yashar Komijani , Piers Coleman

A series of Mn$_{100-x}$Rh$_x$ ($20 \le x \le 50$) thin films were epitaxially grown on the MgO substrate using magnetron sputtering technique, and were systematically investigated by magnetization, longitudinal electrical resistivity, and…

Strongly Correlated Electrons · Physics 2026-01-01 Cong Wang , Zheng Li , Jing Meng , Hui Zhang , Haoyu Lin , Jiyuan Li , Kun Zheng , Yang Xu , Tian Shang , Qingfeng Zhan

The study of subtle effects on transport in semiconductors requires high-quality epitaxial structures with low defect density. Using hybrid molecular beam epitaxy (MBE), SrTiO$_3$ films with low-temperature mobility exceeding 42,000…

Using spin density functional theory we have carried out a comparative study of chemical bonding and magnetism in Fe_4N, Fe_3N and Fe_2N. All of these compounds form close packed Fe lattices, while N occupies octahedral interstitial…

Materials Science · Physics 2009-10-31 M. Sifkovits , H. Smolinski , S. Hellwig , W. Weber

Anomaly-induced transport phenomena in presence of strong external electromagnetic fields are explored within a 4D field theory defined holographically as $U(1)_V\times U(1)_A$ Maxwell-Chern-Simons theory in Schwarzschild-$AdS_5$. Two…

High Energy Physics - Theory · Physics 2019-06-05 Yanyan Bu , Tuna Demircik , Michael Lublinsky

To date, the generic polarization of Bernardini, Fiorentini and Vanderbilt (PBFV) has been widely used to address the issue of polarity in III-V nitride semiconductors, but improvements in nitride materials and the performance of…

Materials Science · Physics 2009-11-11 M. -H Tsai , S. K. Dey