Related papers: Ge virtual substrates for high efficiency III-V so…
Inorganic CdTe and FeSi2-based solar cells have recently drawn a lot of attention because they offer superior thermal stability and good optoelectronic properties compared to conventional solar cells. In this work, a unique alternative…
Electronic structure calculations within screened-exchange hybrid density functional theory show that Cu(In,Ga) antisites in both CuInSe2 and CuGaSe2 are localized hole traps, which can be attributed to the experimentally observed N2 level.…
The decrease of solar cell efficiency with temperature is a known problem for photovoltaics (PV). Temperature sensitivity can lead to a considerable amount of energy losses over the lifetime of solar panels. In this perspective Hybrid…
Modern photovoltaic devices are often based on a heterojunction structure where two components with different optoelectronic properties are interfaced. The properties of each side of the junction can be tuned by either utilizing different…
We have computed the electronic and hole spectra of a 3D superlattice consisting of layers of GaAs rods of finite height arranged in a hexagonal lattice and embedded in an AlGaAs matrix, alternating with spacer layers of homogeneous AlAs.…
The integration of III-V on silicon is still a hot topic as it will open up a way to co-integrate Si CMOS logic with photonic vices. To reach this aim, several hurdles should be solved, and more particularly the generation of antiphase…
This paper presents the experimental results on research of growth processes of GaAs layers on silicon substrates by molecular beam epitaxy. The formation of buffer Si layer in a single growth process has been found to significantly improve…
Sulphurization processes in Cu(In,Ga)Se$_2$ thin-film solar cells has been intensively studied in the last decade as a viable alternative to the existing Ga-grading. The main advantage of using S grading is that by substituting Se with S we…
We present a theoretical study of Ge-core/Si-shell nanocrystals in a wide bandgap matrix and compare the results with experimental data obtained from the samples prepared by co-sputtering. The empirical tight-binding technique allows us to…
In$_2$Se$_3$ in the three-dimensional (3D) hexagonal crystal structure with space group $P6_1$ ($\gamma$-In$_2$Se$_3$) has a direct band gap of $\sim$1.8 eV and high absorption coefficient, making it a promising semiconductor material for…
Quantum dot solar cells (QDSC) are widely acknowledged to be one of the best solar energy harvesting devices in the present world. Absorber layer is a core component of a QDSC with a strong influence on its operational efficiency. Hence, we…
Ultrawide-bandgap semiconductors are attractive for solar-blind ultraviolet (UV) detection owing to their intrinsically low noise and high spectral selectivity, yet their deployment in large-area, high-density electronic imaging systems…
Group IV alloys of GeSn have gained significant attention for electronic and optoelectronic applications on a Si platform due to their compatibility with existing CMOS technology, tunable band structure, and potential for a direct bandgap…
In this article, we demonstrate the design and simulation of a highly-efficient n-CdS/p-CIGS/p+-CGS dual heterojunction solar cell. The simulation was performed using SCAPS-1D software with reported experimental physical parameters. The…
Solar energy is rapidly becoming a robust renewable energy source to conventional finite resources such as fossil fuels. It is harvested using interconnected photovoltaic panels, typically built with crystalline silicon cells, i.e.…
Graphene has been used recently as a replacement for indium tin oxide (ITO) for the transparent electrode of an organic photovoltaic device. Due to its limited supply, ITO is considered as a limiting factor for the commercialization of…
This work emphasizes the potential of perovskite/silicon tandem solar cells for increased power conversion efficiencies. By employing crystalline silicon (c-Si) as the bottom cell, particularly with p-type PERC technology, there are…
We propose an unexplored class of absorbing materials for high-efficiency solar cells: heterostructures of transition-metal oxides. In particular, LaVO_3 grown on SrTiO_3 has a direct band gap ~1.1 eV in the optimal range as well as an…
The method of software analysis of high-resolution TEM images using the peak pairs algorithm in combination with Raman spectroscopy was employed to study lattice deformations in Ge/Si(001) structures with low-temperature Ge quantum dots. It…
Choosing the Indium Gallium Nitride (InGaN) ternary alloy for thin films solar cells might yield high benefits concerning efficiency and reliability, because its bandgap can be tuned through the Indium composition and radiations have little…