Related papers: Ge virtual substrates for high efficiency III-V so…
III-V semiconductor-based photoelectrochemical (PEC) devices show the highest solar-to-electricity or solar-to-fuel conversion efficiencies. GaInP is a relevant top photoabsorber layer or a charge-selective contact in PEC for integrated and…
Wide-gap Cu(In,Ga)S2 solar cells with In2O3:Sn (ITO) as transparent back contact are evaluated for the application as top cells in tandem devices. The effect of Na on the solar cell performance is investigated by supplying additional Na by…
The study proposes an ultra-thin back side illuminated (BSI) and top-illuminated, Ge on Si photodetector (PD), for 1 to 1.4 microns wavelength range. The Ge thickness of 350 nm allows us to achieve high-speed performance at >60 GHz, while…
Nano-scaled metallic or dielectric structures may provide various ways to trap light into thin-film solar cells for improving the conversion efficiency. In most schemes, the textured active layers are involved into light trapping structures…
While renewable energies are achieving parity around the globe, efforts to reach higher solar cell efficiencies becomes ever more difficult as they approach the limiting efficiency. The so-called third generation concepts attempt to break…
Heterostructures based on atomically thin semiconductors are considered a promising emerging technology for the realization of ultrathin and ultralight photovoltaic solar cells on flexible substrates. Much progress has been made in recent…
III-V solar cells dominate the high efficiency charts, but with significantly higher cost than other solar cells. Ultrathin III-V solar cells can exhibit lower production costs and immunity to short carrier diffusion lengths caused by…
We report an improved device fabrication process employed in the development of an advanced front contact grid design employing external busbars. The advanced fabrication process results in enhanced solar cell performance measured at…
Three-dimensional numerical simulations of solar surface magnetoconvection using realistic model physics are conducted. The thermal structure of convective motions into the upper radiative layers of the photosphere, the main scales of…
In this paper we study CdS/CdTe solar cells by means of AMPS-1D software. First we study the effect of thickness of semiconductor layers on the output parameters of the CdS/CdTe solar cell, such as density of short-circuit current, open…
Multijunction solar cells in a tandem configuration could further lower the costs of electricity if crystalline Si (c-Si) is used as bottom cell. However, for direct monolithic integration on c-Si, only a restricted number of top and bottom…
I represent results three-dimensional numerical simulation of solar surface convection on scales local supergranulation with realistic model physics. I study thermal structure of convective motions in photosphere, the range of convection…
Development of the new nanomaterial - the mesoporous Ge - by bipolar electrochemical etching (BEE) and analysis of its physico-chemical properties is the subject of this thesis. Formation of mesoporous Ge by electrochemical etching was…
Computational searching and screening of new functional materials exploiting earth abundant elements can accelerate developments of their energy applications. Based on a state-of-the-art materials search algorithm and ab initio…
Si/Ge uni-traveling carrier photodiodes exhibit higher output current when space-charge effects are overcome and thermal effects are suppressed, which is highly beneficial for increasing the dynamic range of various microwave photonic…
Kesterite is a leading candidate among inorganic thin-film photovoltaic technologies, offering sustainable and environmentally friendly solutions without reliance on critical raw materials. This study investigates the performance of…
We present state-of-the-art first-principle calculations of the electronic and optical properties of silicon allotropes with interesting characteristics for applications in thin-film solar cells. These new phases consist of distorted sp$^3$…
Due to their narrow band gap and compatibility with silicon processing, germanium-tin (Ge$_{1-x}$Sn$_x$) alloys are a versatile platform for scalable integrated mid-infrared photonics. These semiconductors are typically grown on silicon…
Atomically thin layered materials such as graphene and transition-metal dichalcogenides exhibit great potential as active materials in optoelectronic devices because of their high carrier-transporting properties and strong light-matter…
Here, we report the first experimental demonstration of InN nanowire solar cells deposited by RF sputtering with a bandgap energy of 1.78 eV. By adding an amorphous Si (a-Si) buffer to the n-InN/p-Si structure, we have improved the…