Related papers: Ge virtual substrates for high efficiency III-V so…
We propose type-II GaAsSb/GaAsN superlattices (SLs) lattice-matched to GaAs as a novel material for the 1 eV sub-cells present in highly efficient GaAs/Ge-based multi-junction solar cells. We demonstrate that, among other benefits, the…
III-V materials show a wide range of gaps making them ideal for the design of high efficiency solar cells. This chapter reviews relevant growth methods and material properties of these materials and discusses methods of combining…
In single-junction photovoltaic (PV) devices, the maximum achievable power conversion efficiency (PCE) is mainly limited by thermalization and transmission losses, because polychromatic solar irradiation cannot be matched to a single…
In order to obtain higher conversion efficiency and to reduce production cost for amorphous silicon/crystalline silicon (a-Si/c-Si) based heterojunction solar cells, a Heterojunction of Amorphous silicon and Crystalline silicon with…
Re-using the substrate is identified as a method for reducing the cost of high efficiency III-V solar cells. The approach investigated here consists in inserting a graphene layer onto a (001)GaAs substrate prior to the epitaxial growth of…
A process for growing gallium nitride (GaN) vertical p-i-n homojunctions on (111) silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD) was developed, and a triple mesa etch technique was used to fabricate efficient…
Organic-inorganic halide perovskite materials have emerged as attractive alternatives to conventional solar cell building blocks. Their high light absorption coefficients and long diffusion lengths suggest high power conversion efficiencies…
The honeycomb connection of carbon atoms by covalent bonds in a macroscopic two-dimensional scale leads to fascinating graphene and solar cell based on graphene/silicon Schottky diode has been widely studied. For solar cell applications,…
Cu based ternary chalcogenides are gathering attention for sustainable energy applications due to their reduced complexity compared to quaternary alternatives. We used drift diffusion modeling to evaluate the feasibility of photovoltaics…
Multiple exciton generation solar cells (MEGSCs) undergo low efficiency due to material imperfections such as nonradiative recombination This paper introduces alternative approaches for realizing photovoltaic (PV) devices similar to MEGSCs.…
In this paper we conduct numerical simulation of CdS/CIGS solar cells by use of the AMPS-1D software aiming to formulate the optimal design of the new multi-junction tandem solar cell providing its most efficient operation. We start with…
Motivated by the radiation damage of solar panels in space, firstly, the results of Monte Carlo particle transport simulations are presented for proton impact on triple-junction Ga$_{0.5}$In$_{0.5}$P/GaAs/Ge solar cells, showing the proton…
We present a model for simulating performance of 3D nano -coaxial and -hemispherical thin film solar cells. The material system considered in these simulations is hydrogenated amorphous silicon (a-Si:H), with solar cells fabricated in an…
Tellurium allows attaining heavy n-type doping levels in GaAs, which is suited to achieve very low contact resistivities in solar cells. Besides, it modifies the energy bandgap of MOVPE-grown GaInP by reducing the group-III sublattice…
High efficiencies of >30% are predicted for series-connected tandem solar cells when current-matching is achieved between the wide-bandgap top cell and silicon bottom cell. Sub-cells are typically optimised for current-matching based on the…
Perovskite/Si tandem solar cells have the potential to considerably out-perform conventional solar cells. Under standard test conditions, perovskite/Si tandem solar cells already outperform the Si single junction. Under realistic…
The GaAs/AlGaAs quantum well solar cell (QWSC) shows promise as a novel approach to higher efficiency solar cells but suffers from a poor short circuit current Jsc. We report on efforts to reduce this problem with the use of compositional…
The development of Si-compatible active photonic devices is a high priority in computer and modern electronics industry. Ge is compatible with Si and is a promising light emission material. Nearly all Ge-on-Si materials reported so far were…
The monolithic tandem integration of third-generation solar energy materials on silicon holds great promise for photoelectrochemistry and photovoltaics. However, this can be challenging when it involves high-temperature reactive processes,…
The p-type amorphous/ n-type crystalline silicon (P+ a-Si/N+ c-Si) heterojunction was simulated for developing the solar cells with high conversion efficiency and low cost. The characteristic of such cells with different work function of…