In this article, we demonstrate the design and simulation of a highly-efficient n-CdS/p-CIGS/p+-CGS dual heterojunction solar cell. The simulation was performed using SCAPS-1D software with reported experimental physical parameters. The simulation performance of our proposed design arises 47% with Voc=0.98 V, Jsc=59.94 mA/cm2 and FF=80.07%, respectively. The high short circuit current and hence the high efficiency is predominantly originated from the longer wavelength absorption of photon through a tail-states-assisted two-step upconversion in dual heterojunction (DH) and thus reaches the SQ detailed balance limit of DH solar cell.
@article{arxiv.2103.08841,
title = {Simulation approach to reach the SQ limit in CIGS-based dual-heterojunction solar cell},
author = {Shaikh Khaled Mostaque and Bipanko Kumar Mondal and Jaker Hossain},
journal= {arXiv preprint arXiv:2103.08841},
year = {2021}
}