English
Related papers

Related papers: Quantum Dot Arrays in Silicon and Germanium

200 papers

Holes in Ge/SiGe heterostructures are now a leading platform for semiconductor spin qubits, thanks to the high confinement quality, two-dimensional arrays, high tunability, and larger gate structure dimensions. One limiting factor for the…

Spin-based silicon quantum dots are an attractive qubit technology for quantum information processing with respect to coherence time, control, and engineering. Here we present an exchange-only Si qubit device platform that combines the…

State-of-the-art quantum processors have recently grown to reach 100s of physical qubits. As the number of qubits continues to grow, new challenges associated with scaling arise, such as device variability reduction and integration with…

The co-integration of spin, superconducting, and topological systems is emerging as an exciting pathway for scalable and high-fidelity quantum information technology. High-mobility planar germanium is a front-runner semiconductor for…

Quantum systems with engineered Hamiltonians can be used as simulators of many-body physics problems to provide insights beyond the capabilities of classical computers. Semiconductor gate-defined quantum dot arrays have emerged as a…

Experimental realization of a universal set of quantum logic gates is the central requirement for implementation of a quantum computer. An all-geometric approach to quantum computation offered a paradigm for implementation where all the…

Quantum Physics · Physics 2015-06-23 C. Zu , W. -B. Wang , L. He , W. -G. Zhang , C. -Y. Dai , F. Wang , L. -M. Duan

Cluster states, a special type of highly entangled states, are a universal resource for measurement-based quantum computation. Here, we propose an efficient one-step generation scheme for cluster states in semiconductor quantum dot…

Quantum Physics · Physics 2009-11-13 Guo-Ping Guo , Hui Zhang , Tao Tu , Guang-Can Guo

Recent advances in coherent spin shuttling have made sparse semiconductor spin qubit arrays an appealing solid-state platform to realize quantum processors. The dynamic and long-range connectivity enabled by shuttling is also essential for…

We report the fabrication and electrical characterization of a single electron transistor in a modulation doped silicon/silicon-germanium heterostructure. The quantum dot is fabricated by electron beam lithography and subsequent reactive…

Three-dimensional confinement allows semiconductor quantum dots (QDs) to exhibit size-tunable electronic and optical properties that enable a wide range of opto-electronic applications from displays, solar cells and bio-medical imaging to…

Mesoscale and Nanoscale Physics · Physics 2017-07-21 Guohua Wei , David A. Czaplewski , Erik J. Lenferink , Teodor K. Stanev , Il Woong Jung , Nathaniel P. Stern

In the worldwide endeavor for disruptive quantum technologies, germanium is emerging as a versatile material to realize devices capable of encoding, processing, or transmitting quantum information. These devices leverage special properties…

Significant advances have been made towards fault-tolerant operation of silicon spin qubits, with single qubit fidelities exceeding 99.9%, several demonstrations of two-qubit gates based on exchange coupling, and the achievement of coherent…

Mesoscale and Nanoscale Physics · Physics 2019-03-15 A. R. Mills , D. M. Zajac , M. J. Gullans , F. J. Schupp , T. M. Hazard , J. R. Petta

Multi-electron semiconductor quantum dots have found wide application in qubits, where they enable readout and enhance polarizability. However, coherent control in such dots has typically been restricted to only the lowest two levels, and…

We propose and demonstrate a relaxed-SiGe/strained-Si (SiGe/s-Si) enhancement-mode gate stack for quantum dots. The enhancement-mode SiGe/s-Si structure is pursued because it spaces the quantum dot away from charge and spin defect rich…

Mesoscale and Nanoscale Physics · Physics 2011-07-28 T. M. Lu , N. C. Bishop , T. Pluym , J. Means , P. G. Kotula , J. Cederberg , L. A. Tracy , J. Dominguez , M. P. Lilly , M. S. Carroll

We report the fabrication and characterization of a gate-defined double quantum dot formed in a Si/SiGe nanomembrane. In the past, all gate-defined quantum dots in Si/SiGe heterostructures were formed on top of strain-graded virtual…

Recent progress has shown that the dramatically increased number of parameters has become a major issue in tuning of multi-quantum dot devices. The complicated interactions between quantum dots and gate electrodes cause the manual tuning…

Mesoscale and Nanoscale Physics · Physics 2022-08-29 Hanwei Liu , Baochuan Wang , Ning Wang , Zhonghai Sun , Huili Yin , Haiou Li , Gang Cao , Guoping Guo

We propose a new implementation of a universal set of one- and two-qubit gates for quantum computation using the spin states of coupled single-electron quantum dots. Desired operations are effected by the gating of the tunneling barrier…

Mesoscale and Nanoscale Physics · Physics 2009-10-30 Daniel Loss , David P. DiVincenzo

Holes in silicon quantum dots are receiving significant attention due to their potential as fast, tunable, and scalable qubits in semiconductor quantum circuits. Despite this, challenges remain in this material system including difficulties…

Superconducting circuits are exceptionally flexible, enabling many different devices from sensors to quantum computers. Separately, epitaxial semiconductor devices such as spin qubits in silicon offer more limited device variation but…

Mesoscale and Nanoscale Physics · Physics 2014-07-03 Yun-Pil Shim , Charles Tahan

We combine elements of the 1998 quantum computing proposals by Privman, Vagner and Kventsel, and by Kane, with the new idea of nuclear-spin qubit interactions mediated indirectly via the bound outer electrons of impurity atoms whose nuclear…

Quantum Physics · Physics 2016-02-23 Vladimir Privman , Dima Mozyrsky