Related papers: Gate-tunable spin exclusive or operation in a sili…

The generation, manipulation and detection of spin-polarized electrons in nanostructures define the main challenges of spin-based electronics[1]. Amongst the different approaches for spin generation and manipulation, spin-orbit coupling,…

The nonlocal spin injection in lateral spin valves is highly expected to be an effective method to generate a pure spin current for potential spintronic application. However, the spin valve voltage, which decides the magnitude of the spin…

We propose a method for all-electrical initialization, control and readout of the spin of single ions substituted into a semiconductor. Mn ions in GaAs form a natural example. In the ion's ground state the Mn core spin magnetic moment locks…

We report on the electronic transport properties of multiple-gate devices fabricated from undoped silicon nanowires. Understanding and control of the relevant transport mechanisms was achieved by means of local electrostatic gating and…

Spin dependent transport has been investigated for an {\it open shell singlet} diiron-oxo cluster. Currents and magnetoresistances have been studied, as a function of spin state, within the non-equilibrium Green's function approach. The…

We demonstrate a tunable negative differential resistance controlled by spin blockade in single electron transistors. The single electron transistors containing a few electrons and spin polarized source and drain contacts were formed in…

We develop an InAs nanowire gate-all-around field-effect transistor using a transparent conductive zinc oxide (ZnO) gate electrode, which is in-situ atomic layer deposited after growth of gate insulator of Al2O3. We perform…

We report electron spin resonance (ESR) measurements on a large-area silicon MOSFET. An ESR signal at g-factor 1.9999(1), and with a linewidth of 0.6 G, is observed and found to arise from two-dimensional (2D) electrons at the Si/SiO2…

Current-induced magnetization switching through spin-orbit torques (SOTs) is the fundamental building block of spin-orbitronics. The SOTs generally arise from the spin-orbit coupling of heavy metals. However, even in a heterostructure where…

Efficient generation of spin currents from charge currents is of high importance for memory and logic applications of spintronics. In particular, generation of spin currents from charge currents in high spin-orbit coupling metals has the…

Motivated by recent progress in employing two key classes of two-dimensional materials-topological insulators and transition-metal dichalcogenides (TMDCs)-as spin sources for generating spin-orbit torque (SOT), we investigate…

We show that the established physics of spin valves together with the recently discovered giant spin-Hall effect could be used to construct Read and Write units that can be integrated into a single spin switch with input-output isolation,…

We explore the possibilities of designing classical logic gates at nano-scale level using magnetic quantum rings. A single ring is used for designing OR, NOT, XOR, XNOR and NAND gates, while AND and NOR gate responses are achieved using two…

We suggest coherent switching of canted antiferromagnetic (AFM) spins using spin-orbit torque (SOT) in small magnet. The magnetic system of orthoferrite features biaxial easy anisotropy and the Dzyaloshinskii Moriya interaction, which is…

We study spin transport in lateral spin valves with constricted channels. Using electromigration, we modulate the spin accumulation by continuously varying the width of the non-magnetic channel at a single location. By fitting the non-local…

Non-local carrier injection/detection schemes lie at the very foundation of information manipulation in integrated systems. This paradigm consists in controlling with an external signal the channel where charge carriers flow between a…

A theoretical prediction of the spin-dependent electron self-energy and in-plane transport of a two-dimensional electron gas in proximity with a ferromagnetic gate is presented. The application of the predicted spin-dependent properties is…

We report the observation of current-induced spin polarization, the Rashba-Edelstein effect (REE), and its Onsager reciprocal phenomenon, the spin galvanic effect (SGE), in a few-layer graphene/2H-TaS2 heterostructure at room temperature.…

In the "flopping-mode" regime of electron spin resonance, a single electron confined in a double quantum dot is electrically driven in the presence of a magnetic field gradient. The increased dipole moment of the charge in the flopping mode…

Manipulating the electron spin with the aid of spin-orbit coupling (SOC) is an indispensable element of spintronics. Electrostatically gating a material with strong SOC results in an effective magnetic field which can in turn be used to…