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Semiconductor devices continue to press into the nanoscale regime, and new applications have emerged for which the quantum properties of dopant atoms act as the functional part of the device, underscoring the necessity to probe the quantum…

Mesoscale and Nanoscale Physics · Physics 2015-05-13 I. Kuljanishvili , C. Kayis , J. F. Harrison , C. Piermarocchi , T. A. Kaplan , S. H. Tessmer , L. N. Pfeiffer , K. W. West

We perform first-principles calculations to investigate the structural and electronic properties of metal-doped (10, 0) carbon nanotubes (CNTs) on a single hexagonal boron nitride (hBN) sheet in the presence of an external electric field.…

Mesoscale and Nanoscale Physics · Physics 2015-07-22 Seoung-Hun Kang , Gunn Kim , Young-Kyun Kwon

We demonstrate a "bottom up" approach to the computational design of a multifunctional chemical sensor. General techniques are employed for describing the adsorption coverage and resistance properties of the sensor based on density…

Mesoscale and Nanoscale Physics · Physics 2011-05-03 D. J. Mowbray , J. M. Garcia-Lastra , K. S. Thygesen , A. Rubio , K. W. Jacobsen

Electroabsorption spectroscopy of well-identified index-defined semiconducting carbon nanotubes is reported. The measurement of high definition electroabsorption spectra allows direct indexation with unique nanotube chirality. Results show…

We report the transmission over a wide frequency range (far infrared - visible) of pristine and hole-doped, free-standing carbon nanotube films at temperatures between 50 K and 300 K. Optical constants are estimated by Kramers-Kronig…

Materials Science · Physics 2013-05-29 F. Borondics , K. Kamaras , M. Nikolou , D. B. Tanner , Z. H. Chen , A. G. Rinzler

Charge transport in semiconducting single-walled nanotubes (SWNTs) with Schottky-barrier contacts has been studied at high bias. We observe nearly symmetric ambipolar transport with electron and hole currents significantly exceeding 25…

Materials Science · Physics 2007-12-05 Yung-Fu Chen , M. S. Fuhrer

Overdoped high-temperature cuprate superconductors have been widely believed to be described by the physics of d-wave BCS-like superconductivity. However, recent measurements indicate that as the doping is increased, the superfluid density…

Superconductivity · Physics 2019-05-07 Fahad Mahmood , Xi He , Ivan Bozovic , N. P. Armitage

We investigate the effects of impurity scattering on the conductance of metallic carbon nanotubes as a function of the relative separation of the impurities. First we compute the conductance of a clean (6,6) tube, and the effect of model…

Mesoscale and Nanoscale Physics · Physics 2016-09-28 Alain Rochefort , Phaedon Avouris

We investigated the effects of Ni doping on carrier density and anomalous electrical transport properties in CeCo$_{1-x}$Ni$_x$In$_5$ ($x \leq 0.3$) by performing Hall resistivity measurements. The carrier density, estimated from the Hall…

Hyperdoping consists of the intentional introduction of deep-level dopants into a semiconductor in excess of equilibrium concentrations. This causes a broadening of dopant energy levels into an intermediate band between the valence and…

Detecting dopamine is of great biological importance because the molecule plays many roles in the human body. For instance, the lack of dopamine release is the cause of Parkinson's disease. Although many researchers have carried out…

Applied Physics · Physics 2020-02-03 Heeju Kim , Gunn Kim

A theoretical model for the calculation of the phonon-drag thermopower, $S^{g}$, in degenerately doped semiconducting single-wall carbon nanotubes (SWCNTs) is proposed. Detailed calculations of $S^{g}$ are performed as a function of…

Mesoscale and Nanoscale Physics · Physics 2011-03-03 Margarita Tsaousidou

Scanning photocurrent microscopy (SPCM) has been widely used for characterizing charge transport properties, in particular, the minority carrier diffusion length of semiconductors. However, studying lightly doped or intrinsic semiconductors…

Materials Science · Physics 2024-10-10 Xiujun Lian , Hanwei Gao

Bottom-up production of semiconductor nanomaterials is often accompanied by inhomogeneity resulting in a spread in electronic properties which may be influenced by the nanoparticle geometry, crystal quality, stoichiometry or doping. Using…

The performance of carbon nanotube (CNT) cables, a contender for copper-wire replacement, is tied to its metallic and semi-conducting-like conductivity responses with temperature; the origin of the semi-conducting-like response however is…

Solution-processed networks of semiconducting, single-walled carbon nanotubes (SWCNTs) have attracted considerable attention as materials for next-generation electronic devices and circuits. However, the impact of the SWCNT network…

We show that individual dopant atoms dominate the transport characteristics of nanometer sized devices, by investigating metal semiconductor diodes down to 15 nm diameter. Room temperature measurements reveal a strongly increasing scatter…

Condensed Matter · Physics 2009-11-10 G. D. J. Smit , S. Rogge , J. Caro , T. M. Klapwijk

Carbon nanotubes are a good realization of one-dimensional crystals where basic science and potential nanodevice applications merge. Defects are known to modify the electrical resistance of carbon nanotubes. They can be present in as-grown…

Materials Science · Physics 2007-05-23 C. Gomez-Navarro , P. J. De Pablo , J. Gomez-Herrero , B. Biel , F. J. Garcia-Vidal , A. Rubio , F. Flores

The charge transport properties of individual, metallic nitrogen doped, single-walled carbon nanotubes are investigated. It is demonstrated that n-type conduction can be achieved by nitrogen doping. Evidence was obtained by appealing to…

Materials Science · Physics 2009-11-11 V. Krstic , G. L. J. A. Rikken , P. Bernier , S. Roth , M. Glerup

High electric conductivity ~100 MegaSiemens/m and Seebeck coefficient >200 mkV/K of carbon nanotubes (CNT) make them attractive for a variety of applications. Unfortunately, a high thermal conductivity ~ 3000 W/(m*K) due to the phonon…

Mesoscale and Nanoscale Physics · Physics 2016-11-10 T. Gupta , I. P. Nevirkovets , V. Chandrasekhar , S. Shafranjuk