Bottom-up production of semiconductor nanomaterials is often accompanied by inhomogeneity resulting in a spread in electronic properties which may be influenced by the nanoparticle geometry, crystal quality, stoichiometry or doping. Using photoluminescence spectroscopy of a population of more than 20,000 individual Zn-doped GaAs nanowires, we reveal inhomogeneity in, and correlation between doping and nanowire diameter by use of a Bayesian statistical approach. Recombination of hot-carriers is shown to be responsible for the photoluminescence lineshape; by exploiting lifetime variation across the population, we reveal hot-carrier dynamics at the sub-picosecond timescale showing interband electronic dynamics. High-throughput spectroscopy together with a Bayesian approach are shown to provide unique insight in an inhomogeneous nanomaterial population, and can reveal electronic dynamics otherwise requiring complex pump-probe experiments in highly non-equilibrium conditions.
@article{arxiv.2301.10839,
title = {Sub-Picosecond Carrier Dynamics Explored using Automated High-Throughput Studies of Doping Inhomogeneity within a Bayesian Framework},
author = {Ruqaiya Al-Abri and Nawal Al-Amairi and Conor Byrne and Sudhakar Sivakumar and Alex Walton and Martin Magnusson and Patrick Parkinson},
journal= {arXiv preprint arXiv:2301.10839},
year = {2023}
}