Related papers: Single-Particle-Picture Breakdown in laterally wea…
Detailed theoretical study of the magneto-optical properties of weakly confining GaAs/AlGaAs quantum dots is provided. We focus on the diamagnetic coefficient and the $g$-factor of the neutral and the charged excitonic states, respectively,…
The optical properties of excitons confined in initially-unstrained GaAs/AlGaAs quantum dots are studied as a function of a variable quasi-uniaxial stress. To allow the validation of state-of-the-art computational tools for describing the…
A quantum dot fabricated by scanning probe oxidation lithography on a p-type, C-doped GaAs/AlGaAs heterostructure is investigated by low temperature electrical conductance measurements. Clear Coulomb blockade oscillations are observed and…
We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots (density <0.01 um^(-2) capped by a 95 nm GaAs layer, and emitting around 950 nm. By combining optical…
We conduct a combined experimental and theoretical study of the quantum-confined Stark effect in GaAs/AlGaAs quantum dots obtained with the local droplet etching method. In the experiment, we probe the permanent electric dipole and…
Low-temperature electrical conductance spectroscopy measurements of quantum point contacts implemented in p-type GaAs/AlGaAs heterostructures are used to study the Zeeman splitting of 1D subbands for both in-plane and out-of-plane magnetic…
We present numerical investigations based on the Luttinger-Kohn four-band $k \cdot p$ theory and, accordingly, establish a quantitatively valid model of the excitonic fine structures of droplet epitaxial GaAs/AlGaAs quantum dots under…
We report on high-resolution photoluminescence (PL) and photocurrent (PC) spectroscopies of a single self-assembled InAs/GaAs quantum dot (QD) embedded in an n-i-Schottky device with an applied magnetic field in Faraday and Voigt…
Quasi-static transport measurements are employed to characterize a few electron quantum dot electrostatically defined in a GaAs/AlGaAs heterostructure. The gate geometry allows observations on one and the same electron droplet within a wide…
We experimentally determine isotropic and anisotropic g-factor corrections in lateral GaAs single-electron quantum dots. We extract the Zeeman splitting by measuring the tunnel rates into the individual spin states of an empty quantum dot…
We present magneto-optical studies of a self-assembled semiconductor quantum dot in neutral and positively charged states. The diamagnetic shifts and Zeeman splitting of many well-identified optical transitions are precisely measured.…
We present a combined experimental and theoretical study of highly charged and excited electron-hole complexes in strain-free (111) GaAs/AlGaAs quantum dots grown by droplet epitaxy. We address the complexes with one of the charge carriers…
We report on the growth and optical characterisation of droplet GaAs quantum dots with extremely-thin (11 nm) capping layers. To achieve such result, an internal thermal heating step is introduced during the growth and its role in the…
We investigate the wave functions, spectrum, and g-factor anisotropy of low-energy electrons confined to self-assembled, pyramidal InAs quantum dots (QDs) subject to external magnetic and electric fields. We present the construction of…
Zeeman splitting of 1D hole subbands is investigated in quantum point contacts (QPCs) fabricated on a (311) oriented GaAs-AlGaAs heterostructure. Transport measurements can determine the magnitude of the g-factor, but cannot usually…
We present an optical spectroscopy study of non-polar GaN/AlN quantum dots by time-resolved photoluminescence and by microphotoluminescence. Isolated quantum dots exhibit sharp emission lines, with linewidths in the 0.5-2 meV range due to…
Photoluminescence data from single, self-assembled InAs/InP quantum dots in magnetic fields up to 7 T are presented. Exciton g-factors are obtained for dots of varying height, corresponding to ground state emission energies ranging from 780…
We derive a general formalism to model the polariton states resulting from the radiation-matter interaction between an arbitrary number of excitonic transitions in semiconductor quantum dots and photon modes in a photonic crystal structure…
We demonstrate charge tuning in strain free GaAs/AlGaAs quantum dots (QDs) grown by droplet epitaxy on a GaAs(111)A substrate. Application of a bias voltage allows the controlled charging of the QDs from $-3|e|$ to $+2|e|$. The resulting…
We present a detailed investigation into the optical characteristics of individual InAs quantum dots (QDs) grown by metalorganic chemical vapor deposition, with low temperature emission in the telecoms window around 1300 nm. Using…