Related papers: Controllable p$-$n junctions in three$-$dimensiona…
We present transport measurements in superconductor-nanowire devices with a gated constriction forming a quantum point contact. Zero-bias features in tunneling spectroscopy appear at finite magnetic fields, and oscillate in amplitude and…
Designing tunneling junctions with abrupt on-off characteristics and high current densities is critical for many different devices including backward diodes and tunneling field effect transistors (TFETs). It is possible to get a sharp, high…
Current flow in electronic devices can be asymmetric with bias direction, a phenomenon underlying the utility of diodes and known as non-reciprocal charge transport. The promise of dissipationless electronics has recently stimulated the…
Coherent quantum phase slips are expected to lead to a blockade of dc conduction in sufficiently narrow superconducting nanowires below a certain critical voltage. We present measurements of NbN nanowires in which not only is a critical…
We have demonstrated effective fringe field control of one-dimensional electron gas (1-DEG) in AlGaN/GaN lateral nanowires. The nanowires are site controlled and formed by a combination of dry and anisotropic wet etching. The nanowire…
Non-magnetic p-n junctions have been fundamental components in the silicon era, serving as the backbone for nearly all Si-based semiconductor devices, including transistors. To tackle challenges such as scaling limitations, excessive…
Cd3As2 is a model material of Dirac semimetal with a linear dispersion relation along all three directions in the momentum space. The unique band structure of Cd3As2 makes it with both Dirac and topological properties. It can be driven into…
The electronic transport properties of an SNS junction formed by an InN nanowire (N) and Al contacts (S) with a superconducting transition temperature T_c ~ 0.92 K were investigated. As a function of dc bias, superconducting quasiparticle…
Based on the first-principles calculations, we recover the silent topological nature of Cd3As2, a well known semiconductor with high carrier mobility. We find that it is a symmetry-protected topological semimetal with a single pair of…
Cd$_3$As$_2$ is one of the prototypical topological Dirac semimetals. Here, we manipulate the band inversion responsible for the emergence of Dirac nodes by alloying Cd$_3$As$_2$ with topologically trivial Zn$_3$As$_2$. We observe the…
We use scanning photocurrent microscopy (SPCM) to investigate individual suspended semiconducting carbon nanotube devices where the potential profile is engineered by means of local gates. In situ tunable p-n junctions can be generated at…
We report a nanoscale device concept based on a highly doped $\delta$-layer tunnel junction embedded in a semiconductor for charge sensing. Recent advances in Atomic Precision Advanced Manufacturing (APAM) processes have enabled the…
3D Dirac semi-metals (DSMs) are materials that have massless Dirac electrons and exhibit exotic physical properties It has been suggested that structurally distorting a DSM can create a Topological Insulator (TI), but this has not yet been…
Unipolar transport is demonstrated in a bilayer graphene with a series of p-n junctions and is controlled by electrostatic biasing by a comb-shaped top gate. The OFF state is induced by multiple barriers in the p-n junctions, where the band…
We report an experimental study of one-dimensional (1D) electronic transport in an InSb semiconducting nanowire. Three bottom gates are used to locally deplete the nanowire creating a ballistic quantum point contact with only a few…
Typical measurements of nanowire devices rely on end-to-end measurements to reveal mesoscopic phenomena such as quantized conductance or Coulomb blockade. However, creating nanoscale tunnel junctions allows one to directly measure other…
Topological crystalline metals/semimetals (TCMs) have stimulated a great research interest, which broaden the classification of topological phases and provide a valuable platform to explore topological superconductivity. Here, we report the…
A requirement for quantum information processors is the in-situ tunability of the tunnel rates and the exchange interaction energy within the device. The large energy level separation for atom qubits in silicon is well suited for qubit…
Mesoscopic point contacts between elemental metals and the topological 3D Dirac semimetal Cd$_3$As$_2$ have been recently shown to be superconducting with unconventional pairing while Cd$_3$As$_2$ itself does not superconduct. Here we show…
We demonstrate a tunable Dirac-Weyl semimetal phase in two dimensions, realized by introducing in-plane d-wave altermagnetism into a Dirac system. This phase hosts both a central Dirac point and momentumseparated Weyl points connected by…