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The transverse magnetoresistance of thin films of the Diluted Magnetic Semiconductor Zn$_{1-x}$Co$_{x}$O:Al on glass was studied for temperatures in the range of 5 to 100 K. Measurements were made on thin films grown by rf magnetron…

Mesoscale and Nanoscale Physics · Physics 2017-05-26 R. Martínez-Valdez , H. J. Jiménez-González , L. Angelats-Silva , M. Tomar

Physics based numerical simulation has been carried out to probe the sub-gap density of states (DOS) and underlying electron transport properties of amorphous oxide based thin film transistors (TFTs). The DOS model of TFTs consists of…

Applied Physics · Physics 2024-02-15 D. Saha , Sachin Kulkarni

A device and process strategy for achieving reliable indium gallium zinc oxide and indium oxide transistors compatible with a 400oC BEOL thermal budget and without performance degradation is demonstrated by fully exploiting intrinsic oxide…

Thin-film transistors based on amorphous oxide semiconductors (AOS) are promising candidates for enabling further DRAM scaling and 3D integration, which are critical for advanced computing. Despite extensive research, the charge transport…

The hole carrier field-effect mobility of hybrid molybdenum disulfide (MoS2) nanoparticles suspended in poly(3-hexylthiophene) (P3HT) thin film transistor (TFT) was found to be enhanced when it compared to P3HT-only TFTs. The improvement in…

Applied Physics · Physics 2020-02-05 Hyunwoo Choi , William Wong

We show that it is possible to reach one of the ultimate goals of organic electronics: producing organic field-effect transistors with trap densities as low as in the bulk of single crystals. We studied the spectral density of localized…

Materials Science · Physics 2015-05-18 Wolfgang L. Kalb , Simon Haas , Cornelius Krellner , Thomas Mathis , Bertram Batlogg

We systematically investigated the temperature behaviors of the electrical conductivity and Hall coefficient of two series of amorphous indium gallium zinc oxides (a-IGZO) films prepared by rf sputtering method. The two series of films are…

Mesoscale and Nanoscale Physics · Physics 2018-02-14 Hui Zhang , Xin-Jian Xie , Xin-Hua Zhang , Zhi-Qing Li

With the usage of two transparent electrodes, organic solar cells are semitransparent and may be combined to parallel-connected multi-junction devices or used for innovative applications like power-generating windows. A challenging issue is…

We envision the use of an indium tin oxide (ITO) thin film as part of a bi-layered silicon-photonics subwavelength device to boost nonlinearity-assisted all-passive nonreciprocal behavior. The asymmetric p-polarized oblique excitation of a…

Optics · Physics 2025-09-24 Diego M. Solís , Nader Engheta

The class of transparent conductive oxides includes the material indium tin oxide (ITO) and has become a widely used material of modern every-day life such as in touch screens of smart phones and watches, but also used as an optically…

The elasticity and piezoelectricity of zinc oxide (ZnO) crystals and single layers are investigated from the first-principles calculations. It is found that a ZnO thin film less than three Zn-O layers prefers a planar graphite-like…

Materials Science · Physics 2007-05-23 Z. C. Tu , X. Hu

Scaling of transistors has enabled continuous improvements in logic device performance, especially through materials engineering. However, surpassing horizontal limitations in chip manufacturing requires a vertical, third dimension.…

Thin-film based phase plates are meanwhile a widespread tool to enhance the contrast of weak-phase objects in transmission electron microscopy (TEM). The thin film usually consists of amorphous carbon, which suffers from quick degeneration…

Materials Science · Physics 2016-11-23 M. Dries , S. Hettler , T. Schulze , W. Send , E. Müller , R. Schneider , D. Gerthsen , Y. Luo , K. Samwer

Exploitation of transparent conductive oxides (TCO) to implement an energy-autonomous sensor node for a wireless sensor network (WSN) is studied and a practical solution presented. In the practical implementations, flexible and rigid…

Applied Physics · Physics 2019-01-10 Kaarle Jaakkola , Kirsi Tappura

The unique electronic properties of amorphous indium gallium zinc oxide (a-IGZO) thin films are closely associated with the complex charge dynamics of the materials. Conventional studies of charge transport in a-IGZO usually involve…

Materials Science · Physics 2024-11-19 Jia Yu , Yuchen Zhou , Xiao Wang , Xuejian Ma , Ananth Dodabalapur , Keji Lai

Amorphous metal oxide thin-film transistors (TFT) are fabricated using InOx-based semiconductors doped with TiO2, WO3 or SiO2. Although density of dopant is low in the film, change in the electrical properties showed strong dependence on…

Materials Science · Physics 2013-10-25 Shinya Aikawa , Toshihide Nabatame , Kazuhito Tsukagoshi

3D NAND enables continuous NAND density and cost scaling beyond conventional 2D NAND. However, its poly-Si channel suffers from low mobility, large device variations, and instability caused by grain boundaries. Here, we overcome these…

Mesoscale and Nanoscale Physics · Physics 2022-12-19 Chen Sun , Chao Li , Subhranu Samanta , Kaizhen Han , Zijie Zheng , Jishen Zhang , Qiwen Kong , Haiwen Xu , Zuopu Zhou , Yue Chen , Cheng Zhuo , Kai Ni , Xunzhao Yin , Xiao Gong

Si doped ZnO has been reported to be a better conductor than pure ZnO. It is reported that carrier density increases and hence conductivity increases. However, the effect on optical transmission is yet not clear until our recent report [1].…

Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films in low…

Materials Science · Physics 2016-10-28 Deepak Kumar Kaushik , K Uday Kumar , A. Subrahmanyam

In order to continue to improve integrated circuit performance and functionality, scaled transistors with short channel lengths and low thickness are needed. But the further scaling of silicon-based devices and the development of…

Materials Science · Physics 2022-03-08 Mengwei Si , Zehao Lin , Zhizhong Chen , Xing Sun , Haiyan Wang , Peide D. Ye