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Enhancing the transport of oxygen anions in the cathode while maintaining surface stability is essential for improving the performance of intermediate-temperature solid oxide fuel cells (IT-SOFCs). This study investigates a novel cathode…
We report on the design and demonstration of ultra-wide bandgap AlGaN polarization-graded field effect transistors with ultra-thin channels to enable excellent current density and high-frequency performance while significantly reducing…
We report on a systematic comparative study of the spin Hall efficiency between highly face-centered cubic (fcc)-textured Pt-Al alloy films grown on MgO(001) and poorly-crystallized Pt-Al alloy films grown on SiO$_2$. Using CoFeB as the…
The spin-filter material CrVTiAl is a promising candidate for producing highly spin-polarized currents at room temperature in a nonmagnetic architecture. Thin films of compensated-ferrimagnetic CrVTiAl have been grown and their electrical…
Laser annealing offers a promising route to back end of the line fabrication of ferroelectric thin film transistors based on hafnium-zirconium oxide (HZO). Due to the wide band gap of this material, previous reports have studied the…
Recent developments in nanomagnetism and spintronics have enabled the use of ultrafast spin physics for terahertz (THz) emission. Spintronic THz emitters, consisting of ferromagnetic FM / non-magnetic (NM) thin film heterostructures, have…
With the rapid development of economy, the consumption of fossil fuels, and the increasing environment pollution, there is in urgent need of seeking clean and renewable energy sources, as well as highly efficient and low-cost energy storage…
We report thickness dependent metal insulator transition in Ga doped ZnO (Ga:ZnO) thin films grown by pulsed laser deposition technique. From the electrical transport measurements, we find that while the thinnest film exhibits a resistivity…
Zinc-iridium oxide (Zn-Ir-O) thin films have been demonstrated as a p-type conducting material. However, the stability of p-type conductivity with respect to chemical composition or temperature is still unclear. In this study we discuss the…
As silicon transistors scale toward future technology nodes, three-dimensional architectures -- including gate-all-around (GAA) nanoribbon and complementary field-effect transistors (CFETs) -- require channel widths in the tens of…
Alternating layers of granular Iron (Fe) and Titanium dioxide (TiO$_{2-\delta}$) were deposited on (100) Lanthanum aluminate (LaAlO$_3$) substrates in low oxygen chamber pressure using a controlled pulsed laser ablation deposition…
This paper details the development of high-quality, c-axis oriented AlN thin films up to 2 {\mu}m thick, using sputtering on platinum-coated SOI substrates for use in piezoelectric MEMS. Our comprehensive studies illustrate how important…
Recently, interface has been employed to enhance superconductivity in the single-layer FeSe films grown on SrTiO3(001)(STO) with a possible Tc of ~ 80 K, which is nearly ten times of the Tc of bulk FeSe and is above the Tc record of 56 K…
We investigate a series of liquid-crystalline phthalocyanines (metal-free and Cu, Zn, Ni, Co complexes) by correlating their vibrational signatures with their electronic performance in organic thin-film transistors (OTFTs). Raman…
Solution-processed intrinsic ZnO and Al doped ZnO (ZnO:Al) were spin coated on textured n-type c-Si wafer to replace the phosphorus doped amorphous silicon as the electron selective transport layer (ESTL) of the Si heterojunction (SHJ)…
Thin films of the charge-ordered (CO) compound Pr$_{0.5}$Ca$_{0.5}$MnO$_{3}$ have been deposited onto (100)-oriented SrTiO$_{3}$ substrates using the Pulsed Laser Deposition technique. Magnetization and transport properties are measured…
Nanomaterials based on ZnO have been used to build glucose sensors due to its high isoelectric point, which is important when a protein like glucose oxidase (GOx) is attached to a surface. It also creates a biologically friendly environment…
We investigate the capacity attainable for a multiuser MIMO uplink as we scale both array size and bandwidth for regimes in which all-digital arrays incur excessive hardware complexity and power consumption. We consider a tiled hybrid…
Ternary compounds obtained by alloying wurtzite AlN with transition metals have emerged as promising materials with significantly enhanced piezoelectric characteristics relative to binary AlN. The increased electromechanical coupling in…
Flat phonon bands in fluorite ferroelectrics (HfO2 or ZrO2) shrink polar domains laterally to an irreducible half-unit-cell width (0.27 nm) within which the vertical arrangement of dipoles is expected to remain uniform. We report on the…