Related papers: Improving Performance of Tin-Doped-Zinc-Oxide Thin…
We reported here a high-performance In2O3/InZnO bilayer metal-oxide (BMO) thin-film transistor (TFT) using ultra-thin solution-processed ZrOx dielectric. A thin layer of In2O3 offers a higher carrier concentration, thereby maximizing the…
High-performance p-type oxide thin film transistors (TFTs) have great potential for many semiconductor applications. However, these devices typically suffer from low hole mobility and high off-state currents. We fabricated p-type TFTs with…
Metal oxide (MO) semiconductors are widely used in electronic devices due to their high optical transmittance and promising electrical performance. This work describes the advancement toward an eco-friendly, streamlined method for preparing…
Flexible and transparent electronics presents a new era of electronic technologies. Ubiquitous applications involve wearable electronics, biosensors, flexible transparent displays, radio-frequency identifications (RFIDs), etc.Zinc oxide…
Alloying of In/Zn oxides with various X atoms stabilizes the IXZO structures but generates electron traps in the compounds, degrading the electron mobility. To assess whether the latter is linked to the oxygen affinity or the ionic radius,…
Metal oxide thin-film transistors are fast becoming a ubiquitous technology for application in driving backplanes of organic light-emitting diode displays. Currently all commercial products rely on metal oxides processed via physical vapor…
In this work, we demonstrate high performance indium-tin-oxide (ITO) transistors with the channel thickness down to 1 nm and ferroelectric Hf0.5Zr0.5O2 as gate dielectric. On-current of 0.243 A/mm is achieved on sub-micron gate-length ITO…
This work reports back-end-of-line (BEOL) compatible, thin-film transistors (TFTs) with sub-10 nm tungsten-doped tin oxide (TWO) channels deposited by atomic layer deposition (ALD) at 150 $^\circ$C. TFTs with undoped SnO$_{\mathrm{x}}$,…
Transparent oxide semiconductors (TOSs) based thin-film transistors (TFTs) that exhibit higher field effect mobility (uFE) are highly required toward the realization of next-generation displays. Among numerous types of TOS-TFTs, In2O3-based…
Transparent amorphous oxide semiconductors (TAOSs) based transparent thin-film transistors (TTFTs) with high field effect mobility are essential for developing advanced flat panel displays. Among TAOSs, amorphous (a-) SnO$_2$ has several…
Thin film transistors (TFTs) made of transparent channel semiconductors such as ZnO are of great technological importance, because their insensitivity to visible light makes device structures simple. In fact, several demonstrations are made…
The performance of n-type amorphous oxide semiconductor thin-film transistors (TFTs) is largely controlled by the density of states (DoS) near the conduction band mobility edge. Here, the full subgap DoS of amorphous InGaZnO (a-IGZO) TFTs,…
High throughput experimental methods are known to accelerate the rate of research, development, and deployment of electronic materials. For example, thin films with lateral gradients in composition, thickness, or other parameters have been…
High-performance solution-processed short-channel carbon nanotube (CNT) thin film transistors (TFTs) are fabricated using densely aligned arrays of metallic CNTs (m-CNTs) as source and drain electrodes, and aligned arrays of semiconducting…
Among the n-type metal oxide materials used in the planar perovskite solar cells, zinc oxide (ZnO) is a promising candidate to replace titanium dioxide (TiO2) due to its relatively high electron mobility, high transparency, and versatile…
We investigate the gate-voltage dependence of the magnetoconductivity of several amorphous InGaZnO$_4$ (a-IGZO) thin-film transistors (TFTs). The magnetoconductivity exhibits gate-voltage- controlled competitions between weak localization…
The complete subgap defect density of states (DoS) is measured using the ultrabroadband (0.15 to 3.5 eV) photoconduction response from p-type thin-film transistors (TFTs) of tin oxide, SnO, and copper oxide, Cu$_2$O. The TFT photoconduction…
RF sputtered ZnO and Al:ZnO films are attractive transparent conductive oxides for fabrication of opto-electronic devices. In this paper we present efforts to control carrier concentration and mobility of ZnO/Al:ZnO thin films by…
Amorphous oxide semiconductors, especially indium oxide-based (InOx) thin-films, have been major candidates for high mobility with easy-to-use device processability. As one of the dopants in InOx semiconductors, we proposed Si to design a…
We demonstrate high performance chemical bath deposited CdS thin-film transistors TFTs using atomic layer deposited ZrO2 based high-k gate dielectric material.