Related papers: Mask-less Patterning of Gallium-irradiated Superco…
Broadband mid-infrared light sources are highly desired for wide-ranging applications that span free-space communications to spectroscopy. In recent years, silicon has attracted great interest as a platform for nonlinear optical wavelength…
The ability to spatially modulate the electronic properties of solids has led to landmark discoveries in condensed matter physics as well as new electronic applications. Although crystals of strongly correlated metals exhibit a diverse set…
A negative kink in excess conductivity is observed in p-type non-degenerate (moderate dopant concentration) silicon wafers when excited by a very narrow pulse of 532 nm laser appearing just after the complete positive decay of dark…
Topological crystalline insulators (TCIs) possess metallic surface states protected by crystalline symmetry, which are a versatile platform for exploring topological phenomena and potential applications. However, progress in this field has…
We report on mask-less, high resolution etching of diamond surfaces, featuring sizes down to 10 nm. We use a scanning electron microscope (SEM) together with water vapor, which was injected by a needle directly onto the sample surface.…
Enhanced supercontinuum generation (SCG) is experimentally demonstrated in integrated silicon nitride (Si3N4) waveguides incorporating highly nonlinear graphene oxide (GO) in the form of two dimensional (2D) films. Onchip integration of the…
In the current paper, electrical transport properties of 25 nm thick Nb films sputtered on the photosensitive semiconductor BiOCl were investigated in the temperature range 7.5 K $\leq T \leq$ 8.5 K. The influence of green (532 nm) and red…
A continuous guided atomic beam of $^{88}\mathrm{Sr}$ with a phase-space density exceeding $10^{-4}$ in the moving frame and a flux of $3 \times 10^{7} \, \mathrm{at \, s^{-1}}$ is demonstrated. This phase-space density is around three…
We have studied a Superconducting Quantum Interference SQUID device made from a single layer thin film of superconducting silicon. The superconducting layer is obtained by heavily doping a silicon wafer with boron atoms using the Gas…
Superconductivity in group IV semiconductors is desired for hybrid devices combining both semiconducting and superconducting properties. Following boron doped diamond and Si, superconductivity has been observed in gallium doped Ge, however…
The satisfactory explanation of abnormal electromagnetics in thin graphite-like carbon films till now is absent. The most comprehensible explanation may be the high-temperature superconductivity (HTSC). Times of spasmodic switching of…
Elemental materials provide clean and fundamental platforms for studying superconductivity. However, the highest superconducting critical temperature (Tc) yet observed in elements has not exceeded 30 K. Discovering elemental superconductors…
Superconducting transition temperatures Tc of the YBCO film surface and of the YBCO film/substrate interface were measured inductively. It was observed that the interface- Tc is always higher then the surface - Tc. However deposition of…
The single crystal of ThCr2Si2-type BaPd2As2 was successfully prepared by a self-flux method, and the crystal structure was characterized by X-ray diffraction method with the lattice parameters a = 4.489(2) {\AA} and c = 10.322(3) {\AA}.…
We present a new technique for measuring the critical temperature Tc in the high pressure, high Tc electron-phonon-driven superconducting hydrides. This technique does not require connecting leads to the sample. In the multiphonon region of…
A single crystal of isovalently substituted Ba(Fe$_{1-x}$Ru$_{x}$)$_2$As$_2$ ($x=0.24$) was sequentially irradiated with 2.5 MeV electrons up to a maximum dose of $2.1 \times 10^{19}$ electrons/cm^2. The electrical resistivity was measured…
Pr$_{1-x}$Ca$_x$Ba$_2$Cu$_3$O$_{7-\delta}$($x\approx$0.5) thin films have been grown on SrTiO$_3$ and YSZ substrates by the pulsed laser ablation. The substrate temperature dependence of orientation and superconducting poperties were…
Recent predictions and experimental observations of high Tc superconductivity in hydrogen-rich materials at very high pressures are driving the search for superconductivity in the vicinity of room temperature. We have developed a novel…
Impact ionization in silicon devices has been extensively studied and several models for a quantitative description of the impact ionization coefficients have been proposed. We evaluate those models against gain measurements on Low Gain…
Electron-beam (e-beam) lithography is commonly used in fabricating metal-oxide-silicon (MOS) quantum devices but creates defects at the Si/SiO$_2$ interface. Here we show that a forming gas anneal is effective at removing shallow defects…