Superconductivity at 3.85 K in BaPd2As2 with the ThCr2Si2-type structure

Qi Guo; Jia Yu; Bin-Bin Ruan; Dong-Yun Chen; Xiao-Chuan Wang; Qing-Ge Mu; Bo-Jin Pan; Gen-Fu Chen; Zhi-An Ren

doi:10.1209/0295-5075/113/17002

Superconductivity at 3.85 K in BaPd2As2 with the ThCr2Si2-type structure

Superconductivity 2016-02-17 v1

Authors: Qi Guo , Jia Yu , Bin-Bin Ruan , Dong-Yun Chen , Xiao-Chuan Wang , Qing-Ge Mu , Bo-Jin Pan , Gen-Fu Chen , Zhi-An Ren

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Abstract

The single crystal of ThCr2Si2-type BaPd2As2 was successfully prepared by a self-flux method, and the crystal structure was characterized by X-ray diffraction method with the lattice parameters a = 4.489(2) {\AA} and c = 10.322(3) {\AA}. Bulk superconductivity below a Tc (critical temperature) of 3.85 K was revealed in this compound by the measurements of resistivity, magnetic susceptibility and specific heat, and this Tc is much higher than those of other isostructural Pd-based superconductors.

Keywords

single crystal superconductivity mgb2 superconductivity superconductivity

Cite

@article{arxiv.1512.06340,
  title  = {Superconductivity at 3.85 K in BaPd2As2 with the ThCr2Si2-type structure},
  author = {Qi Guo and Jia Yu and Bin-Bin Ruan and Dong-Yun Chen and Xiao-Chuan Wang and Qing-Ge Mu and Bo-Jin Pan and Gen-Fu Chen and Zhi-An Ren},
  journal= {arXiv preprint arXiv:1512.06340},
  year   = {2016}
}

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Superconductivity at 3.85 K in BaPd2As2 with the ThCr2Si2-type structure

Abstract

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