Related papers: TCAD model for TeraFET detectors operating in a la…
The effect of the photoinduced absorption of terahertz (THz) radiation in a semi-insulating GaAs crystal is studied by the pulsed THz transmission spectroscopy. We found that a broad-band modulation of THz radiation may be induced by a…
Ultrafast and sensitive (noise equivalent power <1 nWHz-1/2) light-detection in the Terahertz (THz) frequency range (0.1-10 THz) and at room-temperature is key for applications such as time-resolved THz spectroscopy of gases, complex…
The influence of edge vacancies on the working ability of the planar graphene tunnel field-effect transistor (TFET) is studied at various concentrations and distributions (normal, uniform, periodic) of defects. All calculations are…
We have investigated a THz detection scheme based on mixing of electrical signals in a voltage-dependent capacitance made out of suspended graphene. We have analyzed both coherent and incoherent detection regimes and compared their…
In spintronic terahertz emitters, THz radiation is generated by exciting an ultrafast spin current through femtosecond laser excitation of a ferromagnetic-nonmagnetic metallic heterostructure. Although an extensive phenomenological…
The unique optoelectronic properties of single layer graphene (SLG) are ideal for the development of photonic devices across a broad range of frequencies, from X-rays to microwaves. In the terahertz (THz) range (0.1-10 THz frequency) this…
Motivated by the need for fast timing detectors to withstand up to 2 MGy of ionizing dose at the High Luminosity Large Hadron Collider, prototype low gain avalanche detectors (LGADs) have been fabricated in single pad configuration, 2x2…
Electrically injected terahertz (THz) radiation sources are extremely appealing given their versatility and miniaturization potential, opening the venue for integrated-circuit THz technology. In this work, we show that coherent THz…
Chemical doping of bulk black phosphorus is a well-recognized way to reduce surface oxidation and degradation. Here, we report on the fabrication of terahertz frequency detectors consisting of an antenna-coupled field-effect transistor…
Terahertz spectrometers with a wide instantaneous frequency coverage for passive remote sensing are enormously attractive for many terahertz applications, such as astronomy, atmospheric science and security. Here we demonstrate a wide-band…
The strong light-matter interaction in graphene over a broad frequency range has opened up a plethora of photonics applications of graphene. The goal of this paper is to present the voltage tunability of plasmons in gated single- and…
Charge collection measurements performed on heavily irradiated p-spray dofz pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete…
Graphene offers a possibility for actively controlling plasmon confinement and propagation by tailoring its spatial conductivity pattern. However, implementation of this concept has been hampered because uncontrollable plasmon reflection is…
Moir\'e superlattices formed at the interface between stacked two-dimensional atomic crystals offer limitless opportunities to design materials with widely tunable properties and engineer intriguing quantum phases of matter. However,…
Terahertz (THz) technology is a growing and multi-disciplinary research field, particularly for sensing and telecommunications. A number of THz waveguides have emerged over the past years, which are set to complement the capabilities of…
We investigate a terahertz (THz) gas sensing platform based on all-dielectric metasurfaces that support quasi-bound states in the continuum (quasi-BIC) with both electric and magnetic dipole resonances. The structure is designed to achieve…
Experimental and theoretical studies on ratchet effects in graphene with a lateral superlattice excited by alternating electric fields of terahertz frequency range are presented. A lateral superlatice deposited on top of monolayer graphene…
Laser-induced Terahertz (THz) Emission Spectroscopy (TES) has demonstrated its potential utility in the realm of Metal-Oxide-Semiconductor (MOS) devices as an expedient and noncontact estimation methodology. Owing to its discerning response…
To realize the full spectrum of advantages that the III-nitride materials system offers, the demonstration of p-channel III-nitride based devices is valuable. Authors report the first p-type field effect transistor (pFET) based on an…
Using self-consistent quantum transport simulation on realistic devices, we show that InAs band-to-band Tunneling Field Effect Transistors (TFET) with a heavily doped pocket in the gate-source overlap region can offer larger ON current and…