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Near-field imaging with terahertz (THz) waves is emerging as a powerful technique for fundamental research in photonics and across physical and life sciences. Spatial resolution beyond the diffraction limit can be achieved by collecting THz…

HgCdTe-based quantum cascade lasers operating in the GaAs phonon Reststrahlen band with a target wavelength of 36 mkm are theoretically investigated using the balance equations method. The optimized active region designs, which are based on…

The enhancement of power conversion efficiency beyond the theoretical limit of single-junction solar cells is a key objective in the advancement of hot carrier solar cells. Recent findings indicate that quantum wells (QWs) can effectively…

The model R5912-20MOD photomultiplier tube(PMT) is made for cryogenic application by Hamamatsu. In this paper, we report on the measurement of relative quantum efficiency (QE) of this model PMT at liquid argon(LAr) temperature. Furthermore,…

Large-supercell tight-binding calculations are presented for GaBi$_{x}$As$_{1-x}$/GaAs single quantum wells (QWs) with Bi fractions $x$ of 3.125% and 12.5%. Our results highlight significant distortion of the valence band states due to the…

We explore and systematically compare the morphological, structural and optical properties of GaN/(Al,Ga)N multiple quantum wells (MQWs) grown by plasma-assisted molecular beam epitaxy (PA-MBE) on freestanding GaN$(0001)$ and…

The effectiveness of self-mixing interferometry has been demonstrated across the electromagnetic spectrum, from visible to microwave frequencies, in a plethora of sensing applications, ranging from distance measurement to material analysis,…

Due to their high optical phonon energies GaInP/AlGaInP heterostructures are a promising active medium to solve the problem of creating compact semiconductor sources with an operating frequency range of 5.5-7 THz. In this work, the…

We report on the direct measurement of hot electrons generated in the active region of blue light-emitting diodes grown by ammonia molecular beam epitaxy by electron emission spectroscopy. The external quantum efficiency of these devices is…

We investigate sub-monolayer InN quantum sheets embedded in GaN(0001) by temperature-dependent photoluminescence spectroscopy under both continuous-wave and pulsed excitation. Both the peak energy and the linewidth of the emission band…

Low-threshold lasing under pulsed optical pumping is demonstrated at room temperature for III-nitride microdisks with InGaN/GaN quantum wells on Si in the blue spectral range. Thresholds in the range of 18 kW/cm2 have been achieved along…

Terahertz quantum cascade lasers (THz QCLs) are chip-scale semiconductor lasers operating in the frequency range between 1-6 THz, useful as compact sources for spectroscopy, communications, and non-destructive imaging and testing. Here, we…

The performance of modern light-emitting technologies, from lasers to LEDs, is limited by nonradiative losses, with Auger recombination being the dominant channel at device-relevant carrier densities. Reliable modeling of this process is…

Low-energy fusion of heavy ions is a fascinating coupling-assisted quantum tunnelling problem, whose understanding is crucial for advancing the synthesis of new elements and isotopes. Quantum dynamical coupled-channels calculations of…

Drift-diffusion computer simulations model available in Synopsys' Sentaurus TCAD is used to study electrical, I-V, and optical, I-L, characteristics of separate-confinement heterostructure laser based on $AlGaAs$. We investigate the role of…

Semiconductor colloidal quantum wells (CQWs) make an exciting quasi-2D class of nanocrystals thanks to their unique properties including their highly anisotropic optical transition dipole moment (TDM). Thus, employing a film of CQWs with…

Auger recombination is an important non-radiative carrier recombination mechanism in many classes of optoelectronic devices. The microscopic Auger processes can be either direct or indirect, mediated by an additional scattering mechanism…

A new electron beam-optical procedure is proposed for quasi-cw pumping of high-pressure large-volume He-Ar laser on 4p[1/2]1 - 4s[3/2]2 argon atom transition at the wavelength of 912.5 nm. It consists of creation and maintenance of a…

InGaN-based light emitting diodes (LEDs) are known to suffer from low electron and hole wavefunction overlap due to high piezoelectric field. Staggered InGaN quantum wells (QWs) have been proposed to increase the wavefunction overlap and…

An experimental observation on irreversible thermal quenching and antiquenching behavior is reported for photoluminescence (PL) of ZnS/CdS:Mn/ZnS quantum well quantum dots (QWQDs) prepared with a reverse micelle method. The dual-color…