The performance of modern light-emitting technologies, from lasers to LEDs, is limited by nonradiative losses, with Auger recombination being the dominant channel at device-relevant carrier densities. Reliable modeling of this process is essential, yet conventional treatments neglect dynamic dielectric effects, limiting the predictive reliability at operating conditions. We develop a general framework that incorporates the frequency-dependent screened Coulomb interaction W00(q,ω), computed from low-scaling \textit{GW}, into both direct and phonon-assisted Auger amplitudes. Demonstrated on orthorhombic γ-CsPbI3 (band gap Eg≈1.73 eV) and γ-CsSnI3 (Eg≈1.30 eV), the approach shows that dynamic screening enhances the dielectric response, lowering the room-temperature Auger coefficient by ∼50-60 %. This renormalization shifts the crossover between radiative and nonradiative recombination by nearly a factor of two in carrier density. Dynamic dielectric screening thus emerges as a quantitative determinant of Auger recombination, offering a transferable framework for predictive modeling across polar semiconductors where frequency-independent screening models are inadequate.
@article{arxiv.2512.07581,
title = {Dynamic Screening Effects on Auger Recombination in Metal-Halide Perovskites},
author = {Utkarsh Singh and Sergei I. Simak},
journal= {arXiv preprint arXiv:2512.07581},
year = {2025}
}