Dielectric screening plays a crucial role in shaping the electronic structure of two-dimensional (2D) materials. In 2D semiconductors, screened Coulomb interactions arising from the surrounding dielectric environment are known to induce band renormalization, which is typically understood as a rigid shift of the electronic bands. Here, we experimentally demonstrate that dielectric screening can also give rise to non-rigid, momentum-dependent band renormalization. Using temperature-dependent angle-resolved photoemission spectroscopy (ARPES), we observe pronounced changes in the electronic band structure of monolayer MoS2 on a highly oriented pyrolytic graphite (HOPG) substrate. The results indicate that temperature-driven variations in the effective interlayer separation modulate the dielectric screening experienced by monolayer MoS2. At room temperature, the screening behavior is well described by a momentum-independent monopole approximation, whereas at liquid-helium temperatures the screening evolves into a multipole-like regime, leading to momentum-dependent band shifts.
@article{arxiv.2604.02857,
title = {Band Renormalization in Monolayer MoS2 Induced by Multipole Screening},
author = {Woojoo Lee and Seungwoo Yoo and Marios Zacharias and Junho Choi and Young-Kyun Kwon},
journal= {arXiv preprint arXiv:2604.02857},
year = {2026}
}